CVD Synthesis of HTSC Films Using Volatile Coordination Compounds

S.V. Volkov; V.Y. Zub; O.N. Balakshina; E.A. Mazurenko

doi:doi:10.1051/jphyscol:1995565

Numéro		J. Phys. IV France Volume 05, Numéro C5, Juin 1995 Proceedings of the Tenth European Conference on Chemical Vapour Deposition


Page(s)		C5-553 - C5-556
DOI		https://doi.org/10.1051/jphyscol:1995565

Proceedings of the Tenth European Conference on Chemical Vapour Deposition

J. Phys. IV France 05 (1995) C5-553-C5-556
DOI: 10.1051/jphyscol:1995565

CVD Synthesis of HTSC Films Using Volatile Coordination Compounds

S.V. Volkov, V.Y. Zub, O.N. Balakshina and E.A. Mazurenko

Institute of General and Inorganic Chemistry of National Academy of Sciences of Ukraine 32/34, Palladina prosp., Kiev-142, UA-252142, Ukraine

Abstract
Thin HTSC films of YBa₂Cu₃O_7-x with high c-axis orientation have been grown using PE MOCVD technique and adducts of copper, yttrium and barium acetylacetonate with α,α'- dipyridyl as precursors. In-situ films were deposited in N₂ and O₂ gas reactant mixture reduced substrate temperatures. HTSC films prepared on SrTiO₃, ZrO₂(Y) and MgO substrates have rather high electric characteristics (e.g. j_c ≈ 10⁴ - 10⁵). The problem of β-diketonate adducts using as precursors for plasma enhanced chemical vapor deposition of superconductive films was discussed.