| Issue |
J. Phys. IV France
Volume 05, Number C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|
|---|---|---|
| Page(s) | C5-695 - C5-698 | |
| DOI | https://doi.org/10.1051/jphyscol:1995583 | |
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
J. Phys. IV France 05 (1995) C5-695-C5-698
DOI: 10.1051/jphyscol:1995583
Institute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
© EDP Sciences 1995
J. Phys. IV France 05 (1995) C5-695-C5-698
DOI: 10.1051/jphyscol:1995583
The Study of the Boron Nitride Thin Layer Structure
G.S. Yuryev, E.A. Maximovskiy, Yu.M. Rumyantsev, N.I. Fainer and M.L. KosinovaInstitute of Inorganic Chemistry, Siberian Branch of the Russian Academy of Sciences, 630090 Novosibirsk, Russia
Abstract
The structure of thin layers of boron nitride obtained by low temperature plasma enhanced chemical vapour deposition of borazine as precursor has been investigated by X-ray diffraction method. The diffraction pattern consists of the superposition of the three patterns : from non-crystalline turbostrate am-BN, from polycrystalline h-BN and c-BN. The sizes of intermolecular (nucleus surrounded by "fringe"), 14.8 Å, and intramolecular (nucleus), 7.6 Å, formations are evaluated from the reflection positions in non-crystalline state and confirmed by calculation. Polycrystalline reflections from h-BN and c-BN are in accordance with known ones for these modifications.
© EDP Sciences 1995