| Issue |
J. Phys. IV France
Volume 05, Number C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | C5-307 - C5-314 | |
| DOI | https://doi.org/10.1051/jphyscol:1995536 | |
J. Phys. IV France 05 (1995) C5-307-C5-314
DOI: 10.1051/jphyscol:1995536
Reactor Modelling and Analysis of Amorphous Hydrogenated Silicon Deposition by PECVD
A. Djelloul1, B. Despax2, J.P. Couderc1 and P. Duverneuil11 Laboratoire de Génie Chimique, URA 192 du CNRS, ENSIGC, Chemin de la Loge, 31078 Toulouse, France
2 Laboratoire de Génie Electrique, URA 304 du CNRS, Université Paul Sabatier, 118 Route de Narbonne, 31062 Toulouse cedex, France
Abstract
The behaviour of plasma reactors is complex and affected by a large number of parameters (temperature, pressure, flow rates, power, frequency, etc...). In that context, modeling constitutes a very convenient theoretical approach to analyze the complex parameters influences on the reactors overall performances, in the particular case studied here, amorphous hydrogenated silicon deposition rate profiles on the substrates. This particular study is devoted to a detailed analysis of the reactor behaviour in higher electrical power conditions. It demonstrates that, if relatively simple mechanisms for electron-molecule interactions and gaz phase reactions can be used in low power conditions, this do not remain true in higher power conditions where a great number of reactions must be taken into account.
© EDP Sciences 1995