Recent Trends in the Selection of Metal-Organic Precursors for MOCVD Process

Abstract
The tremendous expansion of metal-organic chemical vapor deposition process (MOCVD) is accounted for its ability to deposit at low temperature a wide variety of thin film materials keeping advantages of the conventional CVD process. The design and the selection of suitably tailored metal-organic precursors is a fundamental key to develop successfully an MOCVD process. The criteria of selection of metal-organic precursors are critically reviewed and the problem of the carbon incorporation in the films is discussed. Advantages and disadvantages of employing single source metal-organic precursors instead of separate precursors for MOCVD of multi-components materials is discussed using results on the deposition of chromium nitride and [MATH]-CoGa.