J. Phys. IV France
Volume 05, Number C5, Juin 1995Proceedings of the Tenth European Conference on Chemical Vapour Deposition
|Page(s)||C5-1173 - C5-1178|
J. Phys. IV France 05 (1995) C5-1173-C5-1178
Physical Properties of Gallium Indium Nitride Films Prepared by Photo-Assisted MOVPET. Nagatomo and O. Omoto
Department of Electronics, Faculty of Engineering, Shibaura Institute of Technology, 3-9-14 Shibaura, Minato-ku, Tokyo 108, Japan
The optical and electrical properties, crystallinity, and photoluminescence of GaInN epitaxial films were remarkably improved by photo-assited MOVPE using ultraviolet (UV) light from a deuterium (D2) lamp. The dissociation of NH3 is promoted by irradiation with a D2 lamp and indium atoms are effectively incorporated into the crystal lattice of GaInN. Good-quality epitaxial GaInN films were obtained at higher growth temperature of 800°C increasing the flow rate of trimethylindium (TMIn). The photoluminescence peak intensity (band-edge emission) of GaInN films grown at 800°C is 14 times as great as that of 675°C.
© EDP Sciences 1995