| Issue |
J. Phys. IV France
Volume 05, Number C5, Juin 1995
Proceedings of the Tenth European Conference on Chemical Vapour Deposition
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| Page(s) | C5-593 - C5-600 | |
| DOI | https://doi.org/10.1051/jphyscol:1995570 | |
J. Phys. IV France 05 (1995) C5-593-C5-600
DOI: 10.1051/jphyscol:1995570
Remote Microwave Plasma Enhanced Chemical Vapour Deposition of Amorphous Carbon : Optical Emission Spectroscopy Characterisation of the Afterglow and Growth Rates
C. Tixier, P. Tristant, J. Desmaison and D. MerleLaboratoire de Matériaux Céramiques et Traitements de Surface, URA 320 du CNRS, Université de Limoges, 123 Av. Albert Thomas, 87060 Limoges cedex, France
Abstract
Amorphous carbon films were obtained by remote microwave plasma enhanced chemical vapour deposition (RMPECVD). In this process, a mixture of argon and hydrogen is excited in the microwave discharge while methane is injected in the afterglow. The substrates are radio-frequency (RF) biased in order to improve the film properties. Three configurations have been compared : microwave, RF, and mixed microwave-RF coupling. Optical emission spectroscopy allowed to compare intensities of a few spectral lines in the afterglow (CH, C2, H, and Ar lines) as a function of process conditions. Films have been characterised by infra-red (IR) spectroscopy and electron recoil detection analysis (ERDA). Stress in the films is in the range of -0.7 to -0.3 GPa (compressive). The influence of the hydrogen presence in the plasma, microwave power and radio-frequency bias voltage is discussed.
© EDP Sciences 1995