Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature p. C3-3 G. Ghibaudo and F. Balestra DOI: https://doi.org/10.1051/jp4:1996301 AbstractPDF (682.2 KB)
Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETs p. C3-13 J.B. Roldán, F. Gámiz, J.A. López-Villanueva and J.E. Carceller DOI: https://doi.org/10.1051/jp4:1996302 AbstractPDF (209.0 KB)
Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation p. C3-19 B. Fischer, L. Selmi, A. Ghetti and E. Sangiorgi DOI: https://doi.org/10.1051/jp4:1996303 AbstractPDF (880.2 KB)
Bias Dependent Hot-Carrier Reliability and Lifetime over a Wide Temperature Range p. C3-25 C. Hwang, J. Gillick, C. Jenq, B. Hammond and J. Woo DOI: https://doi.org/10.1051/jp4:1996304 AbstractPDF (153.6 KB)
Parameter Extraction of MOSFETs Operated at Low Temperature p. C3-29 E. Simoen, C. Claeys and J.A. Martino DOI: https://doi.org/10.1051/jp4:1996305 AbstractPDF (2.318 MB)
Measurement and Modeling of the n-channel and p-channel MOSFET's Inversion Layer Mobility at Room and Low Temperature Operation p. C3-43 B. Cheng and J. Woo DOI: https://doi.org/10.1051/jp4:1996306 AbstractPDF (229.4 KB)
Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs p. C3-49 S.-H. Renn, C. Raynaud and F. Balestra DOI: https://doi.org/10.1051/jp4:1996307 AbstractPDF (1.316 MB)
Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K p. C3-55 A.S. Nicolett, J.A. Martino, E. Simoen and C. Claeys DOI: https://doi.org/10.1051/jp4:1996308 AbstractPDF (153.8 KB)
Gate and Substrate Currents in Deep Submicron MOSFETs p. C3-61 B. Szelag, F. Balestra, G. Ghibaudo and M. Dutoit DOI: https://doi.org/10.1051/jp4:1996309 AbstractPDF (787.9 KB)
Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures p. C3-67 M.A. Pavanello, J.A. Martino and J.-P. Colinge DOI: https://doi.org/10.1051/jp4:1996310 AbstractPDF (204.1 KB)
Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K p. C3-73 I. Kurosawa, M. Maezawa, M. Aoyagi, H. Nakagawa, K. Yamamoto and S. Matsumoto DOI: https://doi.org/10.1051/jp4:1996311 AbstractPDF (874.5 KB)
Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap Semiconductors p. C3-81 T.T. Mnatsakanov, L.I. Pomortseva and V.B. Shuman DOI: https://doi.org/10.1051/jp4:1996312 AbstractPDF (277.2 KB)
Strained Si/SiGe Heterostructures at Low Temperatures. A Monte Carlo Study p. C3-87 F. Gámiz, J.B. Roldán, J.A. López-Villanueva, J.E. Carceller and P. Cartujo DOI: https://doi.org/10.1051/jp4:1996313 AbstractPDF (276.6 KB)
Static Current-Voltage Characteristics of Silicon n+-i-n+ Resistors at Liquid Helium Temperatures p. C3-93 D. Tsamakis and N. Glezos DOI: https://doi.org/10.1051/jp4:1996314 AbstractPDF (610.1 KB)
Anomalous Behaviour of the Electric Field in Highly-Compensated Non-Uniform Semiconductors at Low Temperatures p. C3-99 J.A. Jiménez-Tejada, A. Palma, A. Godoy and J.E. Carceller DOI: https://doi.org/10.1051/jp4:1996315 AbstractPDF (170.5 KB)
Capture Process by Shallow Donors in Silicon at Low Temperatures p. C3-105 A. Palma, J.A. Jiménez-Tejada, A. Godoy and P. Cartujo DOI: https://doi.org/10.1051/jp4:1996316 AbstractPDF (830.8 KB)
The Impact of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT Precision Voltage References p. C3-113 M.S. Latham, J.D. Cressler, A.J. Joseph and R.C. Jaeger DOI: https://doi.org/10.1051/jp4:1996317 AbstractPDF (1.425 MB)
Effect of Transistor Geometry on the Electrical Characteristics of Si1-xGex Heterojunction Bipolar Transistors at Low Temperatures p. C3-119 M.D.R. Hashim, R.F. Lever, P. Ashburn and G.J. Parker DOI: https://doi.org/10.1051/jp4:1996318 AbstractPDF (704.8 KB)
Optimization of Early Voltage for Cooled SiGe HBT Precision Current Sources p. C3-125 A.J. Joseph, J.D. Cressler and D.M. Richey DOI: https://doi.org/10.1051/jp4:1996319 AbstractPDF (241.1 KB)
Influence of Fermi-Dirac Statistics on Collector Current of npn SiGe HBT at Low Temperatures p. C3-131 S. Sokolic and S. Amon DOI: https://doi.org/10.1051/jp4:1996320 AbstractPDF (784.9 KB)
Temperature Dependent Model for Hole Effective Mass in Heavily Doped p-type SiGe p. C3-137 S. Sokolic and S. Amon DOI: https://doi.org/10.1051/jp4:1996321 AbstractPDF (247.3 KB)
Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview p. C3-145 F. Aniel, A. Sylvestre, Y. Jin, P. Crozat, A. de Lustrac and R. Adde DOI: https://doi.org/10.1051/jp4:1996322 AbstractPDF (982.3 KB)
Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures p. C3-151 A. Caddemi and M. Sannino DOI: https://doi.org/10.1051/jp4:1996323 AbstractPDF (687.5 KB)
Comparison Studies of Infrared Phototransistors with a Quantum-Well and a Quantum-Wire Base p. C3-157 V. Ryzhii, I. Khmyrova, M. Ryzhii and M. Ershov DOI: https://doi.org/10.1051/jp4:1996324 AbstractPDF (714.4 KB)
Fabrication and Characterization of Single-Electron Transistors Based on Al/AlOx/Al and Nb/AlOx/Nb Tunnel Junctions p. C3-163 K. Blüthner, M. Götz, W. Krech, H. Mühlig, Th. Wagner, H.-J. Fuchs, D. Schelle, L. Fritzsch, B. Nachtmann and A. Nowack DOI: https://doi.org/10.1051/jp4:1996325 AbstractPDF (1.203 MB)
New Low-Temperature Thermistors InSb:Mn for Nuclear Cryogenic Detectors p. C3-169 S.A. Obukhov and V.N. Trofimov DOI: https://doi.org/10.1051/jp4:1996326 AbstractPDF (818.2 KB)
Low Temperature Electronics for Space Applications p. C3-177 E. Armandillo DOI: https://doi.org/10.1051/jp4:1996327 AbstractPDF (3.143 MB)
Cryogenic Readout Electronics & Technology for FIRST's Stressed Array p. C3-187 J. Seijnaeve, B. Dierickx, D. Scheffer, L. Hermans and L. Haspeslagh DOI: https://doi.org/10.1051/jp4:1996328 AbstractPDF (203.5 KB)
Process Modification for Improved Low Temperature CMOS Performance p. C3-193 C. Hwang, C. Jenq, B. Hammond, J. Gillick and J. Woo DOI: https://doi.org/10.1051/jp4:1996329 AbstractPDF (200.3 KB)
CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design p. C3-199 W.-L. Lu, Z.-W. Hwang and L.S. Lu DOI: https://doi.org/10.1051/jp4:1996330 AbstractPDF (284.9 KB)
Reset Noise at Low Temperatures p. C3-207 N.E. Bock DOI: https://doi.org/10.1051/jp4:1996331 AbstractPDF (176.0 KB)
A 4.2 K Very High-Gain/Modulation Factor Silicon Detector/Modulator p. C3-213 E.A. Gutierrez-D., S.V. Koshevaya, P. Kolev and J. Deen DOI: https://doi.org/10.1051/jp4:1996332 AbstractPDF (503.4 KB)
Cryo-MOSFET and IGBT : a Comparison p. C3-219 O. Mueller DOI: https://doi.org/10.1051/jp4:1996333 AbstractPDF (314.3 KB)
Cryogenic ASICs in GaAs for Applications with Particle Detectors p. C3-225 D.V. Camin and G. Pessina DOI: https://doi.org/10.1051/jp4:1996334 AbstractPDF (1.203 MB)
Improvements in GaAs JFETs for Deep Cryogenic Operation p. C3-231 T.J. Cunningham DOI: https://doi.org/10.1051/jp4:1996335 AbstractPDF (1.087 MB)
Low Temperature Behaviour of Laser Diodes p. C3-237 M.B. Bibey, N. Bourzgui, B. de Cremoux, J.C. Carru, M. Krakowski, P. Richin, P. Tabourier and R. Blondeau DOI: https://doi.org/10.1051/jp4:1996336 AbstractPDF (236.7 KB)
Super Low-Noisy Cooling Amplifier of Millimeter Range with Using the HEMT-Transistors p. C3-245 O.D. Poustylnik, A.A. Maksiasheva and O.P. Golovchenko DOI: https://doi.org/10.1051/jp4:1996337 AbstractPDF (669.2 KB)
Nonlocality and Magnetic Flux Sensitivity of Superconducting Mesoscopic Aluminium Loops p. C3-253 C. Strunk, V. Bruyndoncx, C. Van Haesendonck, V.V. Moshchalkov, Y. Bruynseraede and R. Jonckheere DOI: https://doi.org/10.1051/jp4:1996338 AbstractPDF (767.3 KB)
Fractal Structure Near the Percolation Threshold for YBa2Cu3O7 Epitaxial Films p. C3-259 M. Baziljevich, A.V. Bobyl, H. Bratsberg, R. Deltour, M.E. Gaevski, Yu.M. Galperin, V. Gasumyants, T.H. Johansen, I.A. Khrebtov, V.N. Leonov et al. (2 more) DOI: https://doi.org/10.1051/jp4:1996339 AbstractPDF (1.236 MB)
Structural Characterization of Thin Films and Multilayer Structures p. C3-265 K. Temst, M.J. Van Bael, M. Baert, E. Rosseel, V. Bruyndoncx, C. Strunk, G. Verbanck, K. Mae, C. Van Haesendonck, V.V. Moshchalkov et al. (5 more) DOI: https://doi.org/10.1051/jp4:1996340 AbstractPDF (1.383 MB)
Thermally Activated Dissipation and Upper Critical Magnetic Field under the Strong Electrostatic Field in the BiPbSrCaCuO Thin Film p. C3-271 V.S. Lysenko, Y.V. Gomeniuk, I.P. Tyagulski, I.N. Osiyuk, V.Z. Lozovski and V.N. Varyukhin DOI: https://doi.org/10.1051/jp4:1996341 AbstractPDF (297.7 KB)
Transport properties of Bi2Sr2Ca2Cu3O10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs p. C3-277 U. Frey, H. Meffert, P. Haibach, K. Üstüner, G. Jakob and H. Adrian DOI: https://doi.org/10.1051/jp4:1996342 AbstractPDF (212.7 KB)
The Off-Stoichiometric Bi1.8Pb0.3Sr2Ca2Cu3.3Ox Target for Thin Films p. C3-283 A. Harabor, R. Deltour, M. Ye, J. Schroeder, G. Moortgat and M. Deletter DOI: https://doi.org/10.1051/jp4:1996343 AbstractPDF (1.164 MB)
Thermal Model for the Bolometric Response of YBaCuO Films on Polycrystalline YSZ at 10.6 µm Wavelength p. C3-289 Z. Ben Ayadi, A. Gaugue, A. Degardin, E. Caristan, A. Kreisler, M. Fourrier and M. Redon DOI: https://doi.org/10.1051/jp4:1996344 AbstractPDF (776.9 KB)
Vortex Interactions in 2 x 2 Antidot Clusters p. C3-295 T. Puig, E. Rosseel, L. Van Look, M. Baert, M.J. Van Bael, R. Jonckheere, V.V. Moshchalkov and Y. Bruynseraede DOI: https://doi.org/10.1051/jp4:1996345 AbstractPDF (1.846 MB)
Layered Structures HTSC/Ferroelectric, Prepared by Sputtering p. C3-301 K.G. Grigorov, R.A. Chakalov, A. Spasov, A. Benhocine, D. Bouchier, S.F. Karmanenko and A.I. Dedyk DOI: https://doi.org/10.1051/jp4:1996346 AbstractPDF (342.3 KB)
Magnetic Transitions and Magneto-Transport in Epitaxial Pr0.5Sr0.5MnO3 Thin Films p. C3-309 P. Wagner, V. Metlushko, M. Van Bael, R.J.M. Vullers, L. Trappeniers, A. Vantomme, J. Vanacken, G. Kido, V.V. Moshchalkov and Y. Bruynseraede DOI: https://doi.org/10.1051/jp4:1996347 AbstractPDF (344.7 KB)
Statistical Studies of the Anisotropy of the Pinning Mechanism in YBaCuO Films Deposited on Polycrystalline YSZ Substrates p. C3-315 O. Sarrhini, J. Baixeras and A. Kreisler DOI: https://doi.org/10.1051/jp4:1996348 AbstractPDF (812.6 KB)
Preparation, Characterisation and Dielectric Properties of YBa2Cu3O7-δ/ Insulator-Heterostructures p. C3-321 C. Schwan, A. Schattke, S. Eckert, H. Adrian, B. Schiener and A. Loidl DOI: https://doi.org/10.1051/jp4:1996349 AbstractPDF (611.8 KB)
Basic Aspects of High-Tc Grain Boundary Devices p. C3-329 J. Mannhart, H. Hilgenkamp, B. Mayer, Ch. Gerber, J.R. Kirtley, K.A. Moler and M. Sigrist DOI: https://doi.org/10.1051/jp4:1996350 AbstractPDF (1.525 MB)
Quantum Design of Superconducting Critical Parameters : Fundamental Aspects p. C3-335 V.V. Moshchalkov, M. Baert, V.V. Metlushko, E. Rosseel, M.J. Van Bael, K. Temst, Y. Bruynseraede and R. Jonckheere DOI: https://doi.org/10.1051/jp4:1996351 AbstractPDF (794.5 KB)
Peculiarities of RSFQ Applications with High-Tc Superconductors - an Approach for Design p. C3-345 H. Töpfer, T. Harnisch and F.H. Uhlmann DOI: https://doi.org/10.1051/jp4:1996352 AbstractPDF (283.2 KB)
Analog Simulation on Enhanced ac Josephson Effect for Junction Driven by Pulse Train Current p. C3-351 A. Takada and T. Kikuchi DOI: https://doi.org/10.1051/jp4:1996353 AbstractPDF (1.238 MB)
Patterning of Suitable Structures for the Investigation of the Josephson Effect in YBa2Cu3O7/PrBa2Cu3O7 Superlattices p. C3-357 A. Schattke, Ch. Schwan, H. Meffert, G. Jakob and H. Adrian DOI: https://doi.org/10.1051/jp4:1996354 AbstractPDF (660.1 KB)
High-Tc SQUIDs on Silicon Substrates p. C3-361 P. Seidel, S. Linzen, F. Schmidl and R. Cihar DOI: https://doi.org/10.1051/jp4:1996355 AbstractPDF (1.172 MB)
High Tc SQUIDs for Unshielded Measuring in Disturbed Environments p. C3-367 V. Schultze, R. Ijsselsteijn, R. Stolz and V. Zakosarenko DOI: https://doi.org/10.1051/jp4:1996356 AbstractPDF (768.5 KB)
High Tc Superconducting Flux Flow Transistors : Potential Performances and Problems p. C3-373 P. Bernstein, C. Picard, S. Flament, N. Beaudet, J.F. Hamet and R. Bouregba DOI: https://doi.org/10.1051/jp4:1996357 AbstractPDF (489.5 KB)
Magnetic Field Investigations of Small Sputtered Step-Edge Junctions p. C3-383 M. Vaupel, G. Ockenfuss and R. Wördenweber DOI: https://doi.org/10.1051/jp4:1996358 AbstractPDF (1.369 MB)
Microwave Measurements on YBaCuO Thin Films and Realisation of Microwave Superconducting Devices p. C3-391 P. Lepercq, J.C. Carru, F. Mehri, Y. Crosnier, N. Bourzgui, I. François, J. De Boeck and G. Borghs DOI: https://doi.org/10.1051/jp4:1996359 AbstractPDF (1.104 MB)
S-Parameter Measurements of High-Temperature Superconducting and Normal Conducting Microwave Circuits at Cryogenic Temperatures p. C3-397 J. Lauwers, S. Zhgoon, N. Bourzgui, B. Nauwelaers, J.C. Carru and A. Van de Capelle DOI: https://doi.org/10.1051/jp4:1996360 AbstractPDF (748.4 KB)
Express-Control of Superconducting Microcircuits Technology by Anodization Spectroscopy Method p. C3-403 T.S. Lebedeva, S.Ya. Navala, P.B. Shpilevoy and I.D. Vojtovich DOI: https://doi.org/10.1051/jp4:1996361 AbstractPDF (312.9 KB)
DC SQUID Amplifier for NMR Experiments on Small Samples p. C3-411 O. Hubert, Y. Monfort, J. Lepaisant, C. Gunther and D. Bloyet DOI: https://doi.org/10.1051/jp4:1996362 AbstractPDF (310.8 KB)
Application of Superconducting Electronics to Registration of Biomagnetic Signals p. C3-417 V.N. Sosnitsky and I.D. Vojtovich DOI: https://doi.org/10.1051/jp4:1996363 AbstractPDF (350.1 KB)
A High-Tc Superconductor Bolometer for Remote Sensing of Atmospheric OH p. C3-423 M.J.M.E. de Nivelle, M.P. Bruijn, M. Frericks, R. de Vries, J.J. Wijnbergen, P.A.J. de Korte, S. Sánchez, M. Elwenspoek, T. Heidenblut, B. Schwierzi et al. (2 more) DOI: https://doi.org/10.1051/jp4:1996364 AbstractPDF (358.1 KB)
Application of Semiconductor Whisker Crystals in Low Temperature Electronics p. C3-429 R.I. Baitsar, V.V. Vainberg and S.S. Varshava DOI: https://doi.org/10.1051/jp4:1996365 AbstractPDF (222.2 KB)
