| Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-245 - C3-249 | |
| DOI | https://doi.org/10.1051/jp4:1996337 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-245-C3-249
DOI: 10.1051/jp4:1996337
The State Research Center "Fonon", 37 Peremogy Ave., KPI-3240, Kiyv, Ukraine
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-245-C3-249
DOI: 10.1051/jp4:1996337
Super Low-Noisy Cooling Amplifier of Millimeter Range with Using the HEMT-Transistors
O.D. Poustylnik, A.A. Maksiasheva and O.P. GolovchenkoThe State Research Center "Fonon", 37 Peremogy Ave., KPI-3240, Kiyv, Ukraine
Abstract
We have developed the construction and study cooling down to temperature Tp = 18 K transistors amplifier on the frequency of 22 GHz with bands transmission 10 - 15 %, having the amplification factor no less then 30 dB in the level of own noises 40 K in the range of 22 GHz and 50 K in the range of 36 GHz (Tp = 18 K).
© EDP Sciences 1996