Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures

M.A. Pavanello; J.A. Martino; J.-P. Colinge

doi:doi:10.1051/jp4:1996310

Issue		J. Phys. IV France Volume 06, Number C3, Avril 1996 WOLTE 2 Proceedings of the Second European Workshop on Low Temperature Electronics


Page(s)		C3-67 - C3-72
DOI		https://doi.org/10.1051/jp4:1996310

WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-67-C3-72
DOI: 10.1051/jp4:1996310

Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures

M.A. Pavanello¹, J.A. Martino¹ and J.-P. Colinge²

¹ Laboratório de Sistemas Integráveis, Universidade de São Paulo, Brazil
² Laboratoire de Microélectronique, Université Catholique de Louvain, Belgium

Abstract
In this work is presented a theoretical and experimental analysis of the substrate potential drop and your influence on the fully depleted SOI MOSFET threshold voltage. This study is done at room temperature and at liquid nitrogen temperature. Good agreement was found between the simple model and experimental results.