| Issue |
J. Phys. IV France
Volume 06, Number C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-25 - C3-28 | |
| DOI | https://doi.org/10.1051/jp4:1996304 | |
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-25-C3-28
DOI: 10.1051/jp4:1996304
Bias Dependent Hot-Carrier Reliability and Lifetime over a Wide Temperature Range
C. Hwang1, J. Gillick1, C. Jenq2, B. Hammond2 and J. Woo11 Department of Electrical Engineering, University of California, Los Angeles, 405 Hilgard Avenue, Los Angeles, CA 90095-1594, U.S.A.
2 Superconductor Technologies Incorporated, 460 Ward Street, Suite F, Santa Barbara, CA 93111-2310, U.S.A.
Abstract
CMOS device lifetime is determined at temperatures of 77 K, 150 K, and 218 K. Due to enhanced hot carrier degradation, lower operating voltages are necessary at lower temperatures. A novel, two-slope lifetime behavior is observed at 77 K, emphasizing the need to stress devices near the desired operating voltage. The dominant degradation mechanism depends on the temperature and drain bias. Above a certain voltage, electron injection dominates. Below this bias, interface-state generation leads to a shorter lifetime. The voltage at which this transition occurs is a function of temperature and is of the same order as the power supply voltage at intermediate temperatures. This explains the change of dominant degradation mechanism from interface states (at 300 K) to electron injection (at 77 K).
© EDP Sciences 1996