| Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-237 - C3-243 | |
| DOI | https://doi.org/10.1051/jp4:1996336 | |
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-237-C3-243
DOI: 10.1051/jp4:1996336
Low Temperature Behaviour of Laser Diodes
M.B. Bibey1, N. Bourzgui2, B. de Cremoux1, J.C. Carru2, M. Krakowski1, P. Richin1, P. Tabourier2 and R. Blondeau11 Thomson-CSF LCR, Domaine de Corbeville, 91404 Orsay Cedex, France
2 IEMN, Cité Scientifique, BP 69, 59652 Villeneuve d'Ascq Cedex, France
Abstract
Low temperature behaviour of InGaAsP laser diode is studied. The laser is a Fabry-Pérot type with a Buried Heterostructure. A large improvement of threshold current is obtained as the temperature decreases. The exponential variation of Ith is verified and a T0 value of 69K is deduced. The intrinsic resonant frequency is measured with noise analysis. This resonance varies as the square root of the net injected current. The slopes of these curves are found to increase dramatically with decreasing temperature. The 3 dB bandwidth experiments are also performed, leading in the same way, to a large increase of the slopes with cooling but package parasitics limit the maximum achievable bandwidth. The influence of the laser parasitics, such as the roll-off phenomenum, is also underlined.
© EDP Sciences 1996