Thermally Activated Dissipation and Upper Critical Magnetic Field under the Strong Electrostatic Field in the BiPbSrCaCuO Thin Film

V.S. Lysenko; Y.V. Gomeniuk; I.P. Tyagulski; I.N. Osiyuk; V.Z. Lozovski; V.N. Varyukhin

doi:doi:10.1051/jp4:1996341

Numéro		J. Phys. IV France Volume 06, Numéro C3, Avril 1996 WOLTE 2 Proceedings of the Second European Workshop on Low Temperature Electronics


Page(s)		C3-271 - C3-276
DOI		https://doi.org/10.1051/jp4:1996341

WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-271-C3-276
DOI: 10.1051/jp4:1996341

Thermally Activated Dissipation and Upper Critical Magnetic Field under the Strong Electrostatic Field in the BiPbSrCaCuO Thin Film

V.S. Lysenko¹, Y.V. Gomeniuk¹, I.P. Tyagulski¹, I.N. Osiyuk¹, V.Z. Lozovski¹ and V.N. Varyukhin²

¹ Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, 45 Prosp. Nauki, 252650 Kiev, Ukraine
² Donetsk Physico-Technical Institute, National Academy of Sciences of Ukraine, 72 ul.R. Luxemburg, 340114 Donetsk, Ukraine

Abstract
Three different regimes of thermally activated dissipation behaviour were determined in the superconducting (Bi,Pb)₂Sr₂Ca₂Cu₃O_x thin film in dependence on the external magnetic field. The negative electrostatic field applied to the film surface has been found to increase the activation energy of flux creep in relatively low magnetic fields. The upper critical magnetic field determined from resistive measurements increases in the vicinity of superconducting transition temperature under the influence of the electrostatic field.