| Issue |
J. Phys. IV France
Volume 06, Number C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-199 - C3-206 | |
| DOI | https://doi.org/10.1051/jp4:1996330 | |
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-199-C3-206
DOI: 10.1051/jp4:1996330
CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design
W.-L. Lu1, Z.-W. Hwang1 and L.S. Lu21 Dept. of Physics and Chemistry, Chinese Naval Academy, Tso-Ying, Kaohsiung, Taiwan, R.O.C.
2 Dept. of Applied Physics, Chung Cheng Institute of Technology, Tshsi, Taoyuan, Taiwan, R.O.C.
Abstract
This work presents the low temperature characteristics of commercial complementary-mental-oxide-semiconductor devices, which may be used in the readout electronics of the infrared focal plane array detector. Measurements are performed with the temperature calibration of the device under test. Two most important temperature dependent parameters of the drain current characteristics of the device, the threshold voltage and the carrier mobility are studied. Carrier freeze out effect is considered in the threshold voltage calculation. Two kinds of empirical carrier mobility model are studied, and better model is included in the SPICE mobility model. A revised SPICE MOS level 3 parameter extraction scheme is proposed to extract new mobility model parameters.
© EDP Sciences 1996