| Issue |
J. Phys. IV France
Volume 06, Number C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-225 - C3-230 | |
| DOI | https://doi.org/10.1051/jp4:1996334 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-225-C3-230
DOI: 10.1051/jp4:1996334
Dipartimento di Fisica dell'Università and INFN, Istituto Nazionale di Fisica Nucleare, Via Celoria 16, 20133 Milano, Italy
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-225-C3-230
DOI: 10.1051/jp4:1996334
Cryogenic ASICs in GaAs for Applications with Particle Detectors
D.V. Camin and G. PessinaDipartimento di Fisica dell'Università and INFN, Istituto Nazionale di Fisica Nucleare, Via Celoria 16, 20133 Milano, Italy
Abstract
We present two cryogenic Application Specific Integrated circuits (ASIC's) realized with a GaAs MESFET process. A single-channel differential or double-channel single-ended voltage sensitive preamplifier for 4.2 K operation, to be used with bolometric detectors, was realized and tested. A very simple structure working as a unity gain buffer or as a transconductance amplifier, or even as a shaping filter was tested in view of an application with a fast particle detector operated at liquid Argon temperature.
© EDP Sciences 1996