| Issue |
J. Phys. IV France
Volume 06, Number C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-429 - C3-434 | |
| DOI | https://doi.org/10.1051/jp4:1996365 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-429-C3-434
DOI: 10.1051/jp4:1996365
1 State University "Lvivska Polytechnika", 12 Bandera str., Lviv-13, 290646 Lviv, Ukraine
2 Institute of Semiconductor Physics, Nat. Acad. Sci. of the Ukraine, 45 Prospect Nauki, 252028 Kiev, Ukraine
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-429-C3-434
DOI: 10.1051/jp4:1996365
Application of Semiconductor Whisker Crystals in Low Temperature Electronics
R.I. Baitsar1, V.V. Vainberg2 and S.S. Varshava11 State University "Lvivska Polytechnika", 12 Bandera str., Lviv-13, 290646 Lviv, Ukraine
2 Institute of Semiconductor Physics, Nat. Acad. Sci. of the Ukraine, 45 Prospect Nauki, 252028 Kiev, Ukraine
Abstract
The properties (electric, galvanomagnetic, tensoelectric) of the whisker crystals such as Si-Ge and Te-Se solid solutions, Te, III-V compounds (GaAs, GaP, GaAsP) have been studied in a wide temperature range from 4.2 (for a number of cases from 0.4) to 300 K. The set of thermal, magnetic and mechanical sensors based on these materials has been developed. The sensors are favorably characterized by their miniature dimensions, high speed operation and improved metrological performance.
© EDP Sciences 1996