| Issue |
J. Phys. IV France
Volume 06, Number C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-55 - C3-59 | |
| DOI | https://doi.org/10.1051/jp4:1996308 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-55-C3-59
DOI: 10.1051/jp4:1996308
1 Faculdade de Tecnologia de São Paulo, Brazil
2 Laboratório de Sistemas Integráveis, Universidade de São Paulo, Brazil
3 IMEC, Kapeldreef 75, 3001 Leuven, Belgium
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-55-C3-59
DOI: 10.1051/jp4:1996308
Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K
A.S. Nicolett1, J.A. Martino2, E. Simoen3 and C. Claeys31 Faculdade de Tecnologia de São Paulo, Brazil
2 Laboratório de Sistemas Integráveis, Universidade de São Paulo, Brazil
3 IMEC, Kapeldreef 75, 3001 Leuven, Belgium
Abstract
This work studies the influence of mobility degradation on the effective channel length Leff ( Leff= Lm-ΔL) extraction in submicron fully depleted SOI MOSFETs at 77 K. Second-order effects can cause mobility degradation, mainly at 77 K, and if standard techniques have been used, negative values of ΔL can be obtained. It will be shown that this result can be caused by a length-dependent mobility degradation factor.
© EDP Sciences 1996