Transport properties of Bi2Sr2Ca2Cu3O10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs

U. Frey; H. Meffert; P. Haibach; K. Üstüner; G. Jakob; H. Adrian

doi:doi:10.1051/jp4:1996342

Issue		J. Phys. IV France Volume 06, Number C3, Avril 1996 WOLTE 2 Proceedings of the Second European Workshop on Low Temperature Electronics


Page(s)		C3-277 - C3-282
DOI		https://doi.org/10.1051/jp4:1996342

WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-277-C3-282
DOI: 10.1051/jp4:1996342

Transport properties of Bi₂Sr₂Ca₂Cu₃O_10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs

U. Frey, H. Meffert, P. Haibach, K. Üstüner, G. Jakob and H. Adrian

Johannes Gutenberg-Universität Mainz, Institut für Physik, Staudinger Weg 7, 55099 Mainz, Germany

Abstract
Josephson junctions and SQUIDs on 36.8° SrTiO₃ bicrystal substrates were prepared from epitaxial Bi₂Sr₂Ca₂Cu₃O_10+δ thin films with critical temperatures around 95K. The current-voltage characteristics are well described by the resistively and capacitively shunted junction model. I_cR_n products of 50µV at 77K and 0.7mV at 4.2K have been reached. The I_c(B) dependence is symmetric to B = 0 with an I_c suppression of 90% in the first minimum. Nevertheless it turns out, that the junctions are inhomogeneous on a µm scale. SQUID modulations observed at 78K indicate a flux-voltage transfer function of 2.7µV/Φ₀ at this temperature.