Numéro
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
Page(s) C3-383 - C3-389
DOI https://doi.org/10.1051/jp4:1996358
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

J. Phys. IV France 06 (1996) C3-383-C3-389

DOI: 10.1051/jp4:1996358

Magnetic Field Investigations of Small Sputtered Step-Edge Junctions

M. Vaupel, G. Ockenfuss and R. Wördenweber

Institut für Schicht- und Ionentechnik (ISI), Forschungszentrum Jülich GmbH, 52425 Jülich, Germany


Abstract
YBa2Cu3O7 step-edge junctions are fabricated on SrTiO3-substrates. The steps of 300nm height are milled by argon-ion-beam-etching (IBE). The films are deposited by high-pressure on-axis magnetron sputter technique patterned to microbridges with widths down to 0.5µm by electron beam lithography and argon ion etching. For ratios of film thickness to step height of t/h≈1/2 the current-voltage characteristics show Shapiro steps under microwave irradiation and RSJ-(resistively shunted junction)-like behavior. The periodic dependence of the critical current upon the magnetic field resembles a Fraunhofer-pattern. The period of the variation ΔB0 follows a 1/w2-dependence in agreement with the theoretical prediction for planar thin Josephson junctions : ΔB0=1.84Φ0/W2. Junctions with widths of 0.7µm possess a large magnetic field stability with ΔB0≈100G. Small junctions (w<1µm) exhibit voltage jumps in the Fraunhofer pattern, which are explained by flux penetration of single vortices into the superconducting electrodes. The developed preparation technique for "field-stable" Josephson junctions will be used for wafer scaling on 2-inch substrates and for the production of magnetically stable rf-SQUIDs.



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