| Numéro |
J. Phys. IV France
Volume 06, Numéro C3, Avril 1996
WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics |
|
|---|---|---|
| Page(s) | C3-361 - C3-365 | |
| DOI | https://doi.org/10.1051/jp4:1996355 | |
WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-361-C3-365
DOI: 10.1051/jp4:1996355
Institut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Lessingstr. 8, 07743 Jena, Germany
© EDP Sciences 1996
Proceedings of the Second European Workshop on Low Temperature Electronics
J. Phys. IV France 06 (1996) C3-361-C3-365
DOI: 10.1051/jp4:1996355
High-Tc SQUIDs on Silicon Substrates
P. Seidel, S. Linzen, F. Schmidl and R. CiharInstitut für Festkörperphysik, Friedrich-Schiller-Universität Jena, Lessingstr. 8, 07743 Jena, Germany
Abstract
We have developed high-Tc SQUIDs based on Josephson step-edge junctions on silicon substrates. The SQUIDs show a transfer function up to 150µV/Φ0 and a white noise of 10-5Φ0/Hz at 50 K. During the last three years extensive investigations of the growth of YBCO, buffer and passivation layers as well as step-preparation and patterning processes were necessary to find a standard preparation process comparable to the preparation of Josephson step-edge junctions on classical substrates. In this paper we give an overview on the technical solutions based on the laser deposition of YBCO / buffer multilayer systems and we discuss Josephson junction and SQUID properties depending on different device preparation processes.
© EDP Sciences 1996