Journal de Physique IV

M. Baziljevich, A.V. Bobyl, H. Bratsberg, R. Deltour, M.E. Gaevski, Yu.M. Galperin, V. Gasumyants, T.H. Johansen, I.A. Khrebtov, V.N. Leonov et al. (2 de plus)

DOI: https://doi.org/10.1051/jp4:1996339

Structural Characterization of Thin Films and Multilayer Structures p. C3-265

K. Temst, M.J. Van Bael, M. Baert, E. Rosseel, V. Bruyndoncx, C. Strunk, G. Verbanck, K. Mae, C. Van Haesendonck, V.V. Moshchalkov et al. (5 de plus)

DOI: https://doi.org/10.1051/jp4:1996340

Thermally Activated Dissipation and Upper Critical Magnetic Field under the Strong Electrostatic Field in the BiPbSrCaCuO Thin Film p. C3-271

V.S. Lysenko, Y.V. Gomeniuk, I.P. Tyagulski, I.N. Osiyuk, V.Z. Lozovski et V.N. Varyukhin

DOI: https://doi.org/10.1051/jp4:1996341

Transport properties of Bi₂Sr₂Ca₂Cu₃O_10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs p. C3-277

U. Frey, H. Meffert, P. Haibach, K. Üstüner, G. Jakob et H. Adrian

DOI: https://doi.org/10.1051/jp4:1996342

The Off-Stoichiometric Bi_1.8Pb_0.3Sr₂Ca₂Cu_3.3O_x Target for Thin Films p. C3-283

A. Harabor, R. Deltour, M. Ye, J. Schroeder, G. Moortgat et M. Deletter

DOI: https://doi.org/10.1051/jp4:1996343

Thermal Model for the Bolometric Response of YBaCuO Films on Polycrystalline YSZ at 10.6 µm Wavelength p. C3-289

Z. Ben Ayadi, A. Gaugue, A. Degardin, E. Caristan, A. Kreisler, M. Fourrier et M. Redon

DOI: https://doi.org/10.1051/jp4:1996344

Vortex Interactions in 2 x 2 Antidot Clusters p. C3-295

T. Puig, E. Rosseel, L. Van Look, M. Baert, M.J. Van Bael, R. Jonckheere, V.V. Moshchalkov et Y. Bruynseraede

DOI: https://doi.org/10.1051/jp4:1996345

Layered Structures HTSC/Ferroelectric, Prepared by Sputtering p. C3-301

K.G. Grigorov, R.A. Chakalov, A. Spasov, A. Benhocine, D. Bouchier, S.F. Karmanenko et A.I. Dedyk

DOI: https://doi.org/10.1051/jp4:1996346

Magnetic Transitions and Magneto-Transport in Epitaxial Pr_0.5Sr_0.5MnO₃ Thin Films p. C3-309

P. Wagner, V. Metlushko, M. Van Bael, R.J.M. Vullers, L. Trappeniers, A. Vantomme, J. Vanacken, G. Kido, V.V. Moshchalkov et Y. Bruynseraede

DOI: https://doi.org/10.1051/jp4:1996347

Statistical Studies of the Anisotropy of the Pinning Mechanism in YBaCuO Films Deposited on Polycrystalline YSZ Substrates p. C3-315

O. Sarrhini, J. Baixeras et A. Kreisler

DOI: https://doi.org/10.1051/jp4:1996348

Preparation, Characterisation and Dielectric Properties of YBa₂Cu₃O_7-δ/ Insulator-Heterostructures p. C3-321

C. Schwan, A. Schattke, S. Eckert, H. Adrian, B. Schiener et A. Loidl

DOI: https://doi.org/10.1051/jp4:1996349

Basic Aspects of High-T_c Grain Boundary Devices p. C3-329

J. Mannhart, H. Hilgenkamp, B. Mayer, Ch. Gerber, J.R. Kirtley, K.A. Moler et M. Sigrist

DOI: https://doi.org/10.1051/jp4:1996350

Patterning of Suitable Structures for the Investigation of the Josephson Effect in YBa₂Cu₃O₇/PrBa₂Cu₃O₇ Superlattices p. C3-357

A. Schattke, Ch. Schwan, H. Meffert, G. Jakob et H. Adrian

DOI: https://doi.org/10.1051/jp4:1996354

High-T_c SQUIDs on Silicon Substrates p. C3-361

P. Seidel, S. Linzen, F. Schmidl et R. Cihar

DOI: https://doi.org/10.1051/jp4:1996355

S-Parameter Measurements of High-Temperature Superconducting and Normal Conducting Microwave Circuits at Cryogenic Temperatures p. C3-397

J. Lauwers, S. Zhgoon, N. Bourzgui, B. Nauwelaers, J.C. Carru et A. Van de Capelle

DOI: https://doi.org/10.1051/jp4:1996360

Express-Control of Superconducting Microcircuits Technology by Anodization Spectroscopy Method p. C3-403

T.S. Lebedeva, S.Ya. Navala, P.B. Shpilevoy et I.D. Vojtovich

DOI: https://doi.org/10.1051/jp4:1996361

DC SQUID Amplifier for NMR Experiments on Small Samples p. C3-411

O. Hubert, Y. Monfort, J. Lepaisant, C. Gunther et D. Bloyet

DOI: https://doi.org/10.1051/jp4:1996362

Le Journal de Physique IV

Volume 06 / Numéro C3 (Avril 1996)

WOLTE 2Proceedings of the Second European Workshop on Low Temperature Electronics

Characterization and Modeling of Silicon CMOS Transistor Operation at Low Temperature p. C3-3

Low-Temperature Modelling of Electron-Velocity-Overshoot Effects on 70-250 nm Gate-Length MOSFETs p. C3-13

Electron Injection into the Gate Oxide of MOS Structures at Liquid Nitrogen Temperature : Measurement and Simulation p. C3-19

Bias Dependent Hot-Carrier Reliability and Lifetime over a Wide Temperature Range p. C3-25

Parameter Extraction of MOSFETs Operated at Low Temperature p. C3-29

Measurement and Modeling of the n-channel and p-channel MOSFET's Inversion Layer Mobility at Room and Low Temperature Operation p. C3-43

Floating Body and Hot Carrier Effects in Ultra-Thin Film SOI MOSFETs p. C3-49

Mobility Degradation Influence on the SOI MOSFET Channel Length Extraction at 77 K p. C3-55

Gate and Substrate Currents in Deep Submicron MOSFETs p. C3-61

Theoretical and Experimental Study of the Substrate Effect on the Fully Depleted SOI MOSFET at Low Temperatures p. C3-67

Threshold Voltage Characteristics of Superconductor Gate nMOSFET at 4.2 K p. C3-73

Study on Feasibility of Minority Carrier Complete Drag in Silicon. New Investigation Method Intended for Indirect-Gap Semiconductors p. C3-81

Strained Si/SiGe Heterostructures at Low Temperatures. A Monte Carlo Study p. C3-87

Static Current-Voltage Characteristics of Silicon n+-i-n+ Resistors at Liquid Helium Temperatures p. C3-93

Anomalous Behaviour of the Electric Field in Highly-Compensated Non-Uniform Semiconductors at Low Temperatures p. C3-99

Capture Process by Shallow Donors in Silicon at Low Temperatures p. C3-105

The Impact of Ge Grading on the Bias and Temperature Characteristics of SiGe HBT Precision Voltage References p. C3-113

Effect of Transistor Geometry on the Electrical Characteristics of Si1-xGex Heterojunction Bipolar Transistors at Low Temperatures p. C3-119

Optimization of Early Voltage for Cooled SiGe HBT Precision Current Sources p. C3-125

Influence of Fermi-Dirac Statistics on Collector Current of npn SiGe HBT at Low Temperatures p. C3-131

Temperature Dependent Model for Hole Effective Mass in Heavily Doped p-type SiGe p. C3-137

Enhancements and Degradations in Ultrashort Gate GaAs and InP HEMTs Properties at Cryogenic Temperatures : an Overview p. C3-145

Typical Aspects of the Microwave Noise Performance of HEMTs at Decreasing Temperatures p. C3-151

Comparison Studies of Infrared Phototransistors with a Quantum-Well and a Quantum-Wire Base p. C3-157

Fabrication and Characterization of Single-Electron Transistors Based on Al/AlOx/Al and Nb/AlOx/Nb Tunnel Junctions p. C3-163

New Low-Temperature Thermistors InSb:Mn for Nuclear Cryogenic Detectors p. C3-169

Low Temperature Electronics for Space Applications p. C3-177

Cryogenic Readout Electronics & Technology for FIRST's Stressed Array p. C3-187

Process Modification for Improved Low Temperature CMOS Performance p. C3-193

CMOS 80 K-300 K SPICE Parameter for IRFPA Readout Circuit Design p. C3-199

Reset Noise at Low Temperatures p. C3-207

A 4.2 K Very High-Gain/Modulation Factor Silicon Detector/Modulator p. C3-213

Cryo-MOSFET and IGBT : a Comparison p. C3-219

Cryogenic ASICs in GaAs for Applications with Particle Detectors p. C3-225

Improvements in GaAs JFETs for Deep Cryogenic Operation p. C3-231

Low Temperature Behaviour of Laser Diodes p. C3-237

Super Low-Noisy Cooling Amplifier of Millimeter Range with Using the HEMT-Transistors p. C3-245

Nonlocality and Magnetic Flux Sensitivity of Superconducting Mesoscopic Aluminium Loops p. C3-253

Fractal Structure Near the Percolation Threshold for YBa2Cu3O7 Epitaxial Films p. C3-259

Structural Characterization of Thin Films and Multilayer Structures p. C3-265

Thermally Activated Dissipation and Upper Critical Magnetic Field under the Strong Electrostatic Field in the BiPbSrCaCuO Thin Film p. C3-271

Transport properties of Bi2Sr2Ca2Cu3O10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs p. C3-277

The Off-Stoichiometric Bi1.8Pb0.3Sr2Ca2Cu3.3Ox Target for Thin Films p. C3-283

Thermal Model for the Bolometric Response of YBaCuO Films on Polycrystalline YSZ at 10.6 µm Wavelength p. C3-289

Vortex Interactions in 2 x 2 Antidot Clusters p. C3-295

Layered Structures HTSC/Ferroelectric, Prepared by Sputtering p. C3-301

Magnetic Transitions and Magneto-Transport in Epitaxial Pr0.5Sr0.5MnO3 Thin Films p. C3-309

Statistical Studies of the Anisotropy of the Pinning Mechanism in YBaCuO Films Deposited on Polycrystalline YSZ Substrates p. C3-315

Preparation, Characterisation and Dielectric Properties of YBa2Cu3O7-δ/ Insulator-Heterostructures p. C3-321

Basic Aspects of High-Tc Grain Boundary Devices p. C3-329

Quantum Design of Superconducting Critical Parameters : Fundamental Aspects p. C3-335

Peculiarities of RSFQ Applications with High-Tc Superconductors - an Approach for Design p. C3-345

Analog Simulation on Enhanced ac Josephson Effect for Junction Driven by Pulse Train Current p. C3-351

Patterning of Suitable Structures for the Investigation of the Josephson Effect in YBa2Cu3O7/PrBa2Cu3O7 Superlattices p. C3-357

High-Tc SQUIDs on Silicon Substrates p. C3-361

High Tc SQUIDs for Unshielded Measuring in Disturbed Environments p. C3-367

High Tc Superconducting Flux Flow Transistors : Potential Performances and Problems p. C3-373

Magnetic Field Investigations of Small Sputtered Step-Edge Junctions p. C3-383

Microwave Measurements on YBaCuO Thin Films and Realisation of Microwave Superconducting Devices p. C3-391

S-Parameter Measurements of High-Temperature Superconducting and Normal Conducting Microwave Circuits at Cryogenic Temperatures p. C3-397

Express-Control of Superconducting Microcircuits Technology by Anodization Spectroscopy Method p. C3-403

DC SQUID Amplifier for NMR Experiments on Small Samples p. C3-411

Application of Superconducting Electronics to Registration of Biomagnetic Signals p. C3-417

A High-Tc Superconductor Bolometer for Remote Sensing of Atmospheric OH p. C3-423

Application of Semiconductor Whisker Crystals in Low Temperature Electronics p. C3-429

WOLTE 2
Proceedings of the Second European Workshop on Low Temperature Electronics

Static Current-Voltage Characteristics of Silicon n⁺-i-n⁺ Resistors at Liquid Helium Temperatures p. C3-93

Effect of Transistor Geometry on the Electrical Characteristics of Si_1-xGe_x Heterojunction Bipolar Transistors at Low Temperatures p. C3-119

Fabrication and Characterization of Single-Electron Transistors Based on Al/AlO_x/Al and Nb/AlO_x/Nb Tunnel Junctions p. C3-163

Fractal Structure Near the Percolation Threshold for YBa₂Cu₃O₇ Epitaxial Films p. C3-259

Transport properties of Bi₂Sr₂Ca₂Cu₃O_10+δ Bicrystal Grain Boundary Josephson Junctions and SQUIDs p. C3-277

The Off-Stoichiometric Bi_1.8Pb_0.3Sr₂Ca₂Cu_3.3O_x Target for Thin Films p. C3-283

Magnetic Transitions and Magneto-Transport in Epitaxial Pr_0.5Sr_0.5MnO₃ Thin Films p. C3-309

Preparation, Characterisation and Dielectric Properties of YBa₂Cu₃O_7-δ/ Insulator-Heterostructures p. C3-321

Basic Aspects of High-T_c Grain Boundary Devices p. C3-329

Peculiarities of RSFQ Applications with High-T_c Superconductors - an Approach for Design p. C3-345

Patterning of Suitable Structures for the Investigation of the Josephson Effect in YBa₂Cu₃O₇/PrBa₂Cu₃O₇ Superlattices p. C3-357

High-T_c SQUIDs on Silicon Substrates p. C3-361

High T_c SQUIDs for Unshielded Measuring in Disturbed Environments p. C3-367

High T_c Superconducting Flux Flow Transistors : Potential Performances and Problems p. C3-373

A High-T_c Superconductor Bolometer for Remote Sensing of Atmospheric OH p. C3-423