Journal de Physique IV

Site-specific chemistry of gallium arsenide metalorganic chemical vapor deposition p. Pr8-3

Q. Fu, L. Li, M.J. Begarney, B.-K. Han, D.C. Law et R.F. Hicks

DOI: https://doi.org/10.1051/jp4:1999801

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Frontier trends in the prediction of vapour pressure of metal-organic precursors p. Pr8-15

I.K. Igumenov, V.R. Belosludov et P. A. Stabnikov

DOI: https://doi.org/10.1051/jp4:1999802

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Heats of formation and bond energies in group III compounds p. Pr8-23

M.D. Allendorf, C.F. Melius et C.W. Bauschlicher Jr.

DOI: https://doi.org/10.1051/jp4:1999803

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A density functional theory study of surface and gas phase processes occurring during the MOCVD of ZnS p. Pr8-33

C. Cavallotti, M. Masi, N. Lovergine, P. Prete, A.M. Mancini et S. Carrà

DOI: https://doi.org/10.1051/jp4:1999804

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Chemistry and kinetics of chemical vapor deposition of pyrolytic carbon from methane p. Pr8-41

A. Becker, Z. Hu et K.J. Huettinger

DOI: https://doi.org/10.1051/jp4:1999805

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In-situ monitoring of atmospheric pressure tin oxide CVD using coherent anti-Stokes Raman scattering p. Pr8-49

M.J. Davis et M.E. Pemble

DOI: https://doi.org/10.1051/jp4:1999806

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Growth mechanisms of MOCVD processed Ni thin films p. Pr8-57

L. Brissonneau, A. Reynes et C. Vahlas

DOI: https://doi.org/10.1051/jp4:1999807

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Routes of metal oxide formation from metal β-diketonates used as CVD precursors p. Pr8-65

A.E. Turgambaeva, V.V. Krisyuk, A.F. Bykov et I.K. Igumenov

DOI: https://doi.org/10.1051/jp4:1999808

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The role of the pore surface area/pore volume ratio in chemical vapor infiltration p. Pr8-73

W. Benzinger et K. J. Hüttinger

DOI: https://doi.org/10.1051/jp4:1999809

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The role of the substrate surface area/reactor volume ratio in chemistry and kinetics of chemical vapor deposition p. Pr8-79

M. Teubner, J. Antes, Z. Hu, W. Zhang et K.J. Hüttinger

DOI: https://doi.org/10.1051/jp4:1999810

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Deposition kinetics of Al₂O₃ from AlCl₃-CO₂-H₂-HCl gas mixtures by thermal CVD in a hot-wall reactor p. Pr8-85

M. Schierling, E. Zimmermann et D. Neuschütz

DOI: https://doi.org/10.1051/jp4:1999811

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CVD niobium in Nb-Hal-(H)-inert gas systems : A thermodynamic and experimental approaches p. Pr8-93

A.N. Golubenko, S.V. Sysoev, A.A. Titov et Yu.G. Stenin

DOI: https://doi.org/10.1051/jp4:1999812

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Deposition of ternary silicon based compounds by CVD techniques p. Pr8-101

F.J. Martí, A. Castro, J. Olivares, C. Gómez-Aleixandre et J.M. Albella

DOI: https://doi.org/10.1051/jp4:1999813

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In situ monitoring of atmospheric pressure tin oxide CVD using near-infrared diode laser spectroscopy p. Pr8-109

R.J. Holdsworth, P.A. Martin, D. Raisbeck et M.E. Pemble

DOI: https://doi.org/10.1051/jp4:1999814

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Some recent developments in chemical vapor deposition process and equipment modeling p. Pr8-117

C.R. Kleijn, K.J. Kuijlaars, M. Okkerse, H. van Santen et H.E.A. van den Akker

DOI: https://doi.org/10.1051/jp4:1999815

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Theoretical analysis of a mass conservation equation for a surface reaction between two parallel plates of a chemical vapor deposition reactor p. Pr8-133

N. Mise et T. Watanabe

DOI: https://doi.org/10.1051/jp4:1999816

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Study of the precursor injection in a remote microwave PECVD reactor p. Pr8-141

L. Foucher, F. Naudin, P. Duverneuil, C. Tixier et J. Desmaison

DOI: https://doi.org/10.1051/jp4:1999817

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Modeling of SiO₂ deposition from mixtures of tetraethoxysilane and ozone in an APCVD industrial reactor p. Pr8-149

J.-P. Nieto, B. Caussat, J.-P. Couderc, S. Coletti et L. Jeannerot

DOI: https://doi.org/10.1051/jp4:1999818

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Study of the growth mechanism of CVD silicon films on silica by X-ray reflectivity, atomic force microscopy and scanning electron microscopy p. Pr8-157

A. van der Lee, J. Durand, D. Cot et L. Vázquez

DOI: https://doi.org/10.1051/jp4:1999819

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Kinetic mechanism of the decomposition of dimethyltin dichloride p. Pr8-165

A.M.B. van Mol, M.H.J.M. de Croon, C.I.M.A. Spee et J.C. Schouten

DOI: https://doi.org/10.1051/jp4:1999820

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Chemical vapor deposition of semi-insulating polycrystalline silicon (SIPOS) : Experience and simulation p. Pr8-173

P. Barathieu, B. Caussat, E. Scheid, D. Jaume et J.P. Couderc

DOI: https://doi.org/10.1051/jp4:1999821

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Prediction of LPCVD silicon film microstructure from local operating conditions using numerical modeling p. Pr8-181

A. Dollet, B. Caussat et J.P. Couderc

DOI: https://doi.org/10.1051/jp4:1999822

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LPCVD vertical furnace optimization for undoped polysilicon film deposition p. Pr8-189

A.M. Rinaldi, S. Carrà,, M. Rampoldi, M.C. Martignoni et M. Masi

DOI: https://doi.org/10.1051/jp4:1999823

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A statistical thermodynamic approach to model plasma reactors p. Pr8-197

C. Cavallotti, M. Masi et S. Carrà

DOI: https://doi.org/10.1051/jp4:1999824

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Contribution to the modeling of CVD silicon carbide growth p. Pr8-205

C. Raffy, E. Blanquet, M. Pons, C. Bernard, C.F. Melius et M.D. Allendorf

DOI: https://doi.org/10.1051/jp4:1999825

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Modelling of SiC sublimation growth process : Influence of experimental parameters on crystal shape p. Pr8-213

A. Pisch, E. Blanquet, M. Pons, C. Bernard, M. Anikin, J.M. Dedulle et R. Madar

DOI: https://doi.org/10.1051/jp4:1999826

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Modeling of silicon epitaxial growth with SiHCl₃ in a CVD barrel reactor at atmospheric pressure p. Pr8-221

E. de Paola, P. Duverneuil, A. Langlais et M. Nguyen

DOI: https://doi.org/10.1051/jp4:1999827

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Kinetics of film growth in CVD reactions p. Pr8-229

K.T. Raic

DOI: https://doi.org/10.1051/jp4:1999828

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Modelling of nanosecond LCVD of 3D metal micropatterns p. Pr8-237

E.F. Reznikova et I.K. Igumenov

DOI: https://doi.org/10.1051/jp4:1999829

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Chemical mechanisms of tungsten CVD p. Pr8-245

Yu.V. Lakhotkin

DOI: https://doi.org/10.1051/jp4:1999830

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Modeling of mass-transportation of tris-(acetylacetonato)chromium(III) at atmospheric pressure p. Pr8-251

N.E. Fedotova, A.N. Mikheev, N.V. Gelfond, I.K. Igumenov, N.B. Morozova et R.H. Tuffias

DOI: https://doi.org/10.1051/jp4:1999831

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In-situ mass spectrometric study of the reaction mechanism in MOCVD of Pyrite (FeS₂) p. Pr8-259

L. Reijnen, B. Meester, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999832

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Study of the growth mechanisms of low-pressure chemically vapour deposited silica films p. Pr8-265

F. Ojeda, R. Cuerno, R. Salvarezza et L. Vázquez

DOI: https://doi.org/10.1051/jp4:1999833

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2D and 1D modeling of AMT barrel reactors for silicon deposition p. Pr8-273

M. Masi, C. Cavallotti, S. Carrà, D. Crippa et G. Vaccari

DOI: https://doi.org/10.1051/jp4:1999834

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MOCVD of superconducting oxides, heterostructures and superlattices p. Pr8-283

F. Weiss, J.-P. Sénateur, J. Lindner, V. Galindo, C. Dubourdieu et A. Abrutis

DOI: https://doi.org/10.1051/jp4:1999835

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Atomic layer doping of SiGe p. Pr8-295

B. Tillack

DOI: https://doi.org/10.1051/jp4:1999836

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Structured YBa₂Cu₃O_7-δ thin films grown on aligned calcium stabilized zirconia-calcium zirconate lamellar eutectic substrates p. Pr8-307

J. Santiso, L.A. Angurel, V. Laukhin, R.I. Merino, M. Doudkowsky, G. Garcia, A. Figueras, J.I. Peña, M.L. Sanjuán et V.M. Orera

DOI: https://doi.org/10.1051/jp4:1999837

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CVD of metal chalcogenide films p. Pr8-313

I.S. Chuprakov et K.H. Dahmen

DOI: https://doi.org/10.1051/jp4:1999838

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Amorphous SiGe deposition by LPCVD from Si₂H₆ and GeH₄ precursors p. Pr8-321

J. Olivares, J. Sangrador, A. Rodríguez et T. Rodríguez

DOI: https://doi.org/10.1051/jp4:1999839

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Process stability of SiGe heterostructures for BiCMOS applications p. Pr8-327

P. Ribot, S. Jouan et J.L. Regolini

DOI: https://doi.org/10.1051/jp4:1999840

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Layer-by-layer growth of silicon nitride films by NH₃ and SiH₄ p. Pr8-333

T. Watanabe, M. Sakuraba, T. Matsuura et J. Murota

DOI: https://doi.org/10.1051/jp4:1999841

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Growth of high crystalline quality thin epitaxial CeO₂ films on (1102) sapphire p. Pr8-341

K. Fröhlich, D. Machajdík, L. Hellemans et J. Snauwaert

DOI: https://doi.org/10.1051/jp4:1999842

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Microstructure and deposition characteristics of κ-Al₂O₃ p. Pr8-349

S. Ruppi et A. Larsson

DOI: https://doi.org/10.1051/jp4:1999843

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The LPCVD of rutile at low temperatures p. Pr8-357

M.L. Hitchman et J. Zhao

DOI: https://doi.org/10.1051/jp4:1999844

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Microstructure and properties of nanocomposite diamond films obtained by a new CVD-based technique p. Pr8-365

M.L. Terranova, S. Piccirillo, V. Sessa, M. Rossi et S. Botti

DOI: https://doi.org/10.1051/jp4:1999845

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Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition p. Pr8-373

P. Sourdiaucourt, A. Derré, P. Delhaès et P. David

DOI: https://doi.org/10.1051/jp4:1999846

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Epitaxial growth of TiO₂ (rutile) thin films by halide CVD p. Pr8-381

M. Schuisky et A. Hårsta

DOI: https://doi.org/10.1051/jp4:1999847

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Atmospheric pressure chemical vapour deposition of chromium oxide films p. Pr8-387

I.P. Parkin et M.N. Field

DOI: https://doi.org/10.1051/jp4:1999848

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Low-pressure chemical vapour deposition of mullite coatings in a cold-wall reactor p. Pr8-395

B. Armas, M. de Icaza Herrera, C. Combescure, F. Sibieude et D. Thenegal

DOI: https://doi.org/10.1051/jp4:1999849

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Atmospheric pressure chemical vapour deposition of tin sulfide thin films p. Pr8-403

I.P. Parkin, L.S. Price, A.M.E. Hardy, R.J.H. Clark, T.G. Hibbert et K.C. Molloy

DOI: https://doi.org/10.1051/jp4:1999850

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Injection MOCVD of BaTiO₃/SrTiO₃ artificial superlattices p. Pr8-411

J. Lindner, F. Weiss, J.-P. Sénateur, W. Haessler, G. Koebernik, A. Figueras et J. Santiso

DOI: https://doi.org/10.1051/jp4:1999851

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Synthesis and characterization of CN thin films by IR laser deposition in a flow reactor p. Pr8-419

A. Crunteanu, R. Alexandrescu, S. Cojocaru, M. Charbonnier, M. Romand et F. Vasiliu

DOI: https://doi.org/10.1051/jp4:1999852

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Phase controlled low-pressure chemical vapor deposition of iron(di)sulfide p. Pr8-425

B. Meester, R.A. du Bois, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999853

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H-termination effects on initial growth characteristics of W on Si using WF₆ and SiH₄ gases p. Pr8-431

Y. Yamamoto, T. Matsuura et J. Murota

DOI: https://doi.org/10.1051/jp4:1999854

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Investigations on TiN, TiC and Ti(CN) obtained by chemical vapor deposition p. Pr8-437

N. Popovska, C. Drothler, V.K. Wunder, H. Gerhard et G. Emig

DOI: https://doi.org/10.1051/jp4:1999855

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Preparation and properties of cosmo-mimetic carbon micro-coils and ceramic micro-solenoids/micro-tubes by CVD process p. Pr8-445

S. Motojima, X. Chen, T. Kuzuya, W.-I. Hwang, M. Fujii et H. Iwanaga

DOI: https://doi.org/10.1051/jp4:1999856

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Deposition and characterization of CVD – MoO₃ thin films p. Pr8-453

K.A. Gesheva, T. Ivanova, A. Iossifova, D. Gogova et R. Porat

DOI: https://doi.org/10.1051/jp4:1999857

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Plasma polymer thin films obtained by plasma polymerization of pyrrole p. Pr8-461

S. Borrós, LI. Picazo, N. Ferrer-Anglada, Y. Takhtoukh et J. Esteve

DOI: https://doi.org/10.1051/jp4:1999858

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MOCVD of ferroelectric BaMgF₄ thin films p. Pr8-471

M. Ryazanov, I. Korsakov et N. Kuzmina

DOI: https://doi.org/10.1051/jp4:1999859

PDF (1.283 MB)

Preservation of copper against atmospheric corrosion with a film obtained by plasma polymerization of methane p. Pr8-479

S. Borrós, LI. Picazo et J. Esteve

DOI: https://doi.org/10.1051/jp4:1999860

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CVD of ZrO₂ using ZrI₄ as metal precursor p. Pr8-487

K. Forsgren et A. Hårsta

DOI: https://doi.org/10.1051/jp4:1999861

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Atomic layer deposited thin films for corrosion protection p. Pr8-493

R. Matero, M. Ritala, M. Leskelä, T. Salo, J. Aromaa et O. Forsén

DOI: https://doi.org/10.1051/jp4:1999862

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Low pressure chemical vapour deposition of CN_x layers by interaction between tetramethylguanidine and cyanurchloride p. Pr8-501

L. Zambov, B. Ivanov, G. Georgiev, C. Popov, V. Vassilev et G. Beshkov

DOI: https://doi.org/10.1051/jp4:1999863

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Hafnium carbide as a barrier in multilayer coatings by chemical vapor deposition (CVD) p. Pr8-509

V.K. Wunder, N. Popovska et G. Emig

DOI: https://doi.org/10.1051/jp4:1999864

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Laser CVD of silicon nanoclusters and in-situ process chataracterization p. Pr8-519

A. Goossens, W.F.A. Besling et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999865

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A PE-MOCVD route to V₂O₅ nanostructured thin films p. Pr8-529

D. Barreca, G.A. Battiston, F. Caccavalec, V. di Noto, R. Gerbasi, A. Gregori, G.A. Rizzi, A. Tiziani et E. Tondello

DOI: https://doi.org/10.1051/jp4:1999866

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Preparation of iron carbide and iron nanoparticles by laser-induced gas phase pyrolysis p. Pr8-537

R. Alexandrescu, S. Cojocaru, A. Crunteanu, I. Morjan, I. Voicu, L. Diamandescu, F. Vasiliu, F. Huisken et B. Kohn

DOI: https://doi.org/10.1051/jp4:1999867

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In-situ Raman spectroscopy and laser-induced fluorescence during laser chemical vapor precipitation of silicon nanoparticles p. Pr8-545

W.F.A. Besling, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999868

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MOCVD of electroceramic oxides : A precursor manufacturer's perspective p. Pr8-553

A.C. Jones, T.J. Leedham, J. Brooks et H.O. Davies

DOI: https://doi.org/10.1051/jp4:1999869

PDF (1.687 MB)

Single source MOCVD of superconducting films onto moved substrates p. Pr8-561

O. Stadel,, L. Klippe, J. Schmidt, G. Wahl, S.V. Samoylenkov, O.Yu. Gorbenko et A.R. Kaul

DOI: https://doi.org/10.1051/jp4:1999870

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Deposition of Ta₂O₅ and (TiO₂)-(Ta₂O₅) films from Ta(OEt)₄(DMAE) and Ti(OEt)₂(DMAE)₂, by IMOCVD p. Pr8-569

C. Jiménez, M. Paillous, R. Madar, J.P. Sénateur et A.C. Jones

DOI: https://doi.org/10.1051/jp4:1999871

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MOCVD of ferroelectric thin films p. Pr8-575

C. Schmidt, W. Lehnert, T. Leistner, L. Frey et H. Ryssel

DOI: https://doi.org/10.1051/jp4:1999872

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Er, Yb, and Er, Yb (CO-)doped yttria thin films, deposited by an aerosol assisted MO-CVD process p. Pr8-583

W. Meffre, J.-L. Deschanvres, M.-F. Joubert, L. Abello, J.-C. Joubert et B. Jacquier

DOI: https://doi.org/10.1051/jp4:1999873

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OMVPE of GaN using (N₃)₂Ga[(CH₂)₃N(CH₃)₂] (BAZIGA) in a cold wall reactor p. Pr8-589

A. Devi, W. Rogge, R.A. Fischer, F. Stowasser, H. Sussek, H.W. Becker, J. Schäfer et J. Wolfrum

DOI: https://doi.org/10.1051/jp4:1999874

PDF (1.405 MB)

MOCVD of Ni and Ni₃C films from Ni(dmen)₂(tfa)₂ p. Pr8-597

L. Brissonneau, A. Kacheva, F. Senocq, J.-K. Kang, S.-W. Rhee, A. Gleizes et C. Vahlas

DOI: https://doi.org/10.1051/jp4:1999875

PDF (1.042 MB)

Optimisation of the MOCVD of Ti(C, N) in a pulsed H₂ - N₂ plasma by gas-phase analysis p. Pr8-605

J. P.A.M. Driessen, A. D. Kuypers et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999876

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Synthesis of pyrite (FeS₂) thin films by low pressure metal-organic chemical vapor deposition p. Pr8-613

B. Meester, L. Reijnen, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999877

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Phase relations in thin epitaxial films of complex oxides prepared by MOCVD p. Pr8-621

S.V. Samoylenkov, O.Yu. Gorbenko, I.E. Graboy, A.R. Kaul, O. Stadel, G. Wahl et H.W. Zandbergen

DOI: https://doi.org/10.1051/jp4:1999878

PDF (1.861 MB)

Epitaxial ferroelectric capacitors obtained by MOCVD p. Pr8-629

M.A. Novozhilov, A.R. Kaul, O.Yu. Gorbenko, I.E. Graboy, G. Wahl et U. Krause

DOI: https://doi.org/10.1051/jp4:1999879

PDF (2.001 MB)

Low-temperature MOCVD of molybdenum sulfide on silicon and 100Cr6 steel substrates p. Pr8-637

F. Senocq, L. Bezombes, A. Gleizes, J.A. Garcia et R.J. Rodriguez

DOI: https://doi.org/10.1051/jp4:1999880

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MOCVD and properties of in situ doped Pt-SnO₂ thin films p. Pr8-643

M. Amjoud et F. Maury

DOI: https://doi.org/10.1051/jp4:1999881

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Chemical vapor deposition of tin oxide from SnEt₄ p. Pr8-651

N. Bertrand, P. Duverneuil, M. Amjoud et F. Maury

DOI: https://doi.org/10.1051/jp4:1999882

PDF (1.044 MB)

Chemical composition effects in the thin films of the colossal magnetoresistive perovskite manganates grown by MOCVD p. Pr8-659

O.Yu. Gorbenko, I.E. Graboy, A.A. Bosak, V.A. Amelichev, A.Yu. Ganin, A.R. Kaul, G. Wahl et H.W. Zandberben

DOI: https://doi.org/10.1051/jp4:1999883

PDF (2.555 MB)

MOCVD of SnO₂ thin films from a new organometallic precursor p. Pr8-667

D. Barreca, S. Garon, P. Zanella et E. Tondello

DOI: https://doi.org/10.1051/jp4:1999884

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Gas-phase FT-IR analysis and growth kinetics of Al₂O₃ in a LP-MOCVD reactor using new dialkylacetylacetonate precursors p. Pr8-675

G.A. Battiston, G. Carta, R. Gerbasi, M. Porchia, L. Rizzo et G. Rossetto

DOI: https://doi.org/10.1051/jp4:1999885

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YSZ/CeO₂/YBCO heterostructures grown in-situ by pulsed injection CVD p. Pr8-683

A. Abrutis

DOI: https://doi.org/10.1051/jp4:1999886

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Growth of oxide buffer layers and YBCO films on various substrates by pulsed injection CVD p. Pr8-689

A. Abrutis, V. Plaušinaitiene, A. Teišerskis, V. Kubilius, Z. Šaltyte, J.P. Sénateur et L. Dapkus

DOI: https://doi.org/10.1051/jp4:1999887

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CVD induced by ion beams for the preparation of oxide and nitride thin films p. Pr8-699

A.R. González-Elipe, J.P. Espinós, A. Barranco, F. Yubero et A. Caballero

DOI: https://doi.org/10.1051/jp4:1999888

PDF (1.512 MB)

Volatile surfactant assisted MOCVD of oxide materials p. Pr8-709

A.A. Molodyk, A.R. Kaul, O.Yu. Gorbenko, M.A. Novojilov, I.E. Korsakov et G. Wahl

DOI: https://doi.org/10.1051/jp4:1999889

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Plasma-enhanced chemical vapour deposition and structural characterization of amorphous chalcogenide films p. Pr8-717

P. Nagels, R. Callaerts et R. Mertens

DOI: https://doi.org/10.1051/jp4:1999890

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Carbon nitride films prepared by inductively coupled plasma chemical vapour deposition from a solid carbon source p. Pr8-725

C. Popov, M.F. Plass et W. Kulisch

DOI: https://doi.org/10.1051/jp4:1999891

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Deposition of nanoscale rhodium dots by STM assisted CVD p. Pr8-733

F. Marchi, D. Tonneau, R. Pierrisnard, V. Bouchiat, V. Safarov, H. Dallaporta, P. Doppelt et R. Even

DOI: https://doi.org/10.1051/jp4:1999892

PDF (1.505 MB)

Modeling of aerosol-assisted chemical vapor co-deposition of NiO and carbon nanotubes p. Pr8-741

D. Narducci, L. Toselli et P. Milani

DOI: https://doi.org/10.1051/jp4:1999893

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SnO₂ thin films prepared by ion beam induced CVD. Preparation and characterization p. Pr8-749

V.M. Jiménez, J.P. Espinós, A.R. González-Elipe, A. Caballero et F. Yubero

DOI: https://doi.org/10.1051/jp4:1999894

PDF (1.974 MB)

Synthesis of polycrystalline silicon films on metalized ceramic substrates with laser-assisted chemical vapor deposition p. Pr8-757

G. Korevaar, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999895

PDF (1.265 MB)

In situ mass spetrometry during laser-induced chemical vapor deposition of silicon carbonitride p. Pr8-763

G. Korevaar, W. Besling, A. Goossens et J. Schoonman

DOI: https://doi.org/10.1051/jp4:1999896

PDF (427.4 KB)

RPECVD thin silicon carbonitride films using hexamethyldisilazane p. Pr8-769

N.I. Fainer, M.L. Kosinova, Yu.M. Rumyantsev et F.A. Kuznetsov

DOI: https://doi.org/10.1051/jp4:1999897

PDF (311.7 KB)

RPECVD thin cadmium, copper and zinc sulphide films p. Pr8-777

Yu.M. Rumyantsev, N.I. Fainer, M.L. Kosinova, B.M. Ayupov et N.P. Sysoeva

DOI: https://doi.org/10.1051/jp4:1999898

PDF (347.8 KB)

Kinetics of laser-assisted single crystal growth of tungsten rods p. Pr8-785

K. Larsson, K. Williams, J. Maxwell et M. Boman

DOI: https://doi.org/10.1051/jp4:1999899

PDF (586.6 KB)

Photo-MOCVD of Cu thin films using Cu(hfa)(MHY) as precursor p. Pr8-791

S. Vidal, F. Maury, A. Gleizes, T.-Y. Chen et P. Doppelt

DOI: https://doi.org/10.1051/jp4:19998100

PDF (1.135 MB)

Remote plasma metalorganic chemical vapor deposition of GaN epilayers p. Pr8-799

M. Losurdo, P. Capezzuto et G. Bruno

DOI: https://doi.org/10.1051/jp4:19998101

PDF (315.9 KB)

Study of sensing complex thin films prepared by PECVD method to H₂S p. Pr8-805

G. Dai et Y. Wu

DOI: https://doi.org/10.1051/jp4:19998102

PDF (660.2 KB)

Deposition of metastable Ti_(1-x)Al_xN films by plasma-enhanced CVD p. Pr8-811

R. Prange et D. Neuschütz

DOI: https://doi.org/10.1051/jp4:19998103

PDF (1.623 MB)

RMPECVD of silica films in large scale microwave plasma reactor : Films properties p. Pr8-819

F. Naudin, P. Tristant, M.C. Hugon, I. Jauberteau, B. Agius et J. Desmaison

DOI: https://doi.org/10.1051/jp4:19998104

PDF (1.550 MB)

Deposition of tungsten by plasma enhanced chemical vapour deposition p. Pr8-827

M.F. Bain, B.M. Armstrong et H.S. Gamble

DOI: https://doi.org/10.1051/jp4:19998105

PDF (754.2 KB)

ALD precursor chemistry : Evolution and future challenges p. Pr8-837

M. Leskelä et M. Ritala

DOI: https://doi.org/10.1051/jp4:19998106

PDF (769.0 KB)

Chemical vapor deposition of zinc gallate using a novel single precursor p. Pr8-853

C.G. Kim, W. Koh, S.-J. Ku, E.J. Nah, K.-S.Yu et Y. Kim

DOI: https://doi.org/10.1051/jp4:19998107

PDF (1016 KB)

Synthesis and characterisation of β-ketoesterate complexes of yttrium, barium and copper(II) : New precursors for liquid injection MOCVD ? p. Pr8-861

H. Guillon, S. Daniele et L.G. Hubert-Pfalzgraf

DOI: https://doi.org/10.1051/jp4:19998108

PDF (494.7 KB)

Precision mass flow metering for CVD applications p. Pr8-869

H.J. Boer

DOI: https://doi.org/10.1051/jp4:19998109

PDF (237.8 KB)

Unveiling the magic of H₂S on the CVD-Al₂O₃ coating p. Pr8-877

T. Oshika, A. Nishiyama, K. Nakaso, M. Shimada et K. Okuyama

DOI: https://doi.org/10.1051/jp4:19998110

PDF (434.2 KB)

Boron doped polysilicon deposition in a sector reactor : Specific phenomena and properties p. Pr8-885

E. Scheid, L. Furgal et H. Vergnes

DOI: https://doi.org/10.1051/jp4:19998111

PDF (1.244 MB)

Initial stages of growth of LPCVD polysilicon films. Effect of the surface "ageing" p. Pr8-893

D. Davazoglou

DOI: https://doi.org/10.1051/jp4:19998112

PDF (1.566 MB)

New flash-evaporation feeder for chemical vapor deposition p. Pr8-901

I.S. Chuprakov, J.D. Martin et K.H. Dahmen

DOI: https://doi.org/10.1051/jp4:19998113

PDF (307.9 KB)

Properties of multicomponent layers produced on high speed steel by combined nitriding and PACVD methods under glow discharge conditions p. Pr8-909

J.R. Sobiecki, S.K. Kim, T. Wierzchon et J. Trojanowski

DOI: https://doi.org/10.1051/jp4:19998114

PDF (1.206 MB)

LPCVD boron carbonitride films from triethylamine borane p. Pr8-915

M.L. Kosinova, N.I. Fainer, Yu.M. Rumyantsev, A.N. Golubenko et F.A. Kuznetsov

DOI: https://doi.org/10.1051/jp4:19998115

PDF (939.6 KB)

Silver pivalate as a new volatile precursor for thin film deposition p. Pr8-923

N. Kuzmina, S. Paramonov, R. Ivanov, V. Kezko, K. Polamo et S. Troyanov

DOI: https://doi.org/10.1051/jp4:19998116

PDF (1.003 MB)

New volatile heterocyclic metal diketonates for MOCVD p. Pr8-929

A. Drozdov, S. Troyanov, O. Fedorchenko, G. Battiston, C. Pettinari, F. Marchetti et A. Cingolani

DOI: https://doi.org/10.1051/jp4:19998117

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Comparison of tantalum precursors for use in liquid injection CVD of thin film oxides, dielectrics and ferroelectrics p. Pr8-935

M.J. Crosbie, P.J. Wright, D.J. Williams, P.A. Lane, J. Jones, A.C. Jones, T.J. Leedham, P. O'Brien et H.O. Davies

DOI: https://doi.org/10.1051/jp4:19998118

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Heterobimetallic single-source precursors for MOCVD. Synthesis and characterization of volatile mixed ligand complexes of lanthanides, barium and magnesium β-diketonates with d-element containing ligands p. Pr8-943

A.N. Gleizes, F. Senocq, M. Julve, J.L. Sanz, N. Kuzmina, S. Troyanov, I. Malkerova, A. Alikhanyan, M. Ryazanov, A. Rogachev et E. Dedlovskaya

DOI: https://doi.org/10.1051/jp4:19998119

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Niobium and tantalum derivatives with bidentate nitrogen ligands as potential precursors to nitrides p. Pr8-953

L.G. Hubert-Pfalzgraf, J.-M. Decams et S. Daniele

DOI: https://doi.org/10.1051/jp4:19998120

PDF (274.6 KB)

In situ real time ellipsometry for GaN remote plasma MOCVD technology p. Pr8-961

G. Bruno, P. Capezzuto et M. Losurdo

DOI: https://doi.org/10.1051/jp4:19998121

PDF (927.2 KB)

Continuous CVD processing of multi-filament fibre coatings for the manufacture of ceramic matrix composites p. Pr8-977

A.G. Dias, E. Nagy et A. Saturnio

DOI: https://doi.org/10.1051/jp4:19998122

PDF (2.468 MB)

AlNi coatings on the internal surfaces of tubes p. Pr8-987

C. Labatut, C. Metz, G. Wahl, P. Bianchi, M. Innocenti et J.-P. Hirvonen

DOI: https://doi.org/10.1051/jp4:19998123

PDF (921.1 KB)

FTIR based process control for industrial reactors p. Pr8-995

V. Hopfe, W. Grählert et O. Throl

DOI: https://doi.org/10.1051/jp4:19998124

PDF (363.8 KB)

Development of an in-situ thickness measurement technique for film growth by APCVD p. Pr8-1003

J.M. Rivero, J. Marsh et D. Raisbeck

DOI: https://doi.org/10.1051/jp4:19998125

PDF (417.5 KB)

In-situ process monitoring of MOCVD of superconducting and dielectric oxide thin films p. Pr8-1013

S. Yamamoto, S. Sugai et S. Oda

DOI: https://doi.org/10.1051/jp4:19998126

PDF (847.6 KB)

In situ characterization of atomic layer deposition processes by a mass spectrometer p. Pr8-1021

M. Ritala, M. Juppo, K. Kukli, A. Rahtu et M. Leskelä

DOI: https://doi.org/10.1051/jp4:19998127

PDF (433.3 KB)

Diamond nuclei formation in a microwave plasma assisted chemical vapor deposition (MWCVD) system p. Pr8-1029

M.M. García, L. Vázquez, C. Gómez-Aleixandre et O. Sánchez

DOI: https://doi.org/10.1051/jp4:19998128

PDF (1.003 MB)

GaInN/GaN heterostructures grown in production scale MOVPE reactors p. Pr8-1035

O. Schoen, H. Protzmann, O. Rockenfeller, B. Schineller, M. Heuken et H. Juergensen

DOI: https://doi.org/10.1051/jp4:19998129

PDF (451.8 KB)

In-situ-spectroscopic monitoring for SIC-CVD process control p. Pr8-1041

K. Brennfleck, S. Schneweis et R. Weiss

DOI: https://doi.org/10.1051/jp4:19998130

PDF (1.058 MB)

CVD-produced ZrO₂- and C/ZrO₂-fiber coatings for mullite/mullite composites p. Pr8-1049

K. Nubian, B. Saruhan, H. Schneider et G. Wahl

DOI: https://doi.org/10.1051/jp4:19998131

PDF (1.031 MB)

XPS and XPS valence band characterizations of amorphous or polymeric silicon based thin films prepared by PACVD from organosilicon monomers p. Pr8-1059

R. Berjoan, E. Biche, D. Perarnau, S. Roualdes et J. Durand

DOI: https://doi.org/10.1051/jp4:19998132

PDF (545.6 KB)

Nucleation behavior during the first stages of SiC growth on different substrates p. Pr8-1069

E. Hurtós, J. Rodríguez-Viejo, M.T. Clavaguera-Mora et K. Zekentes

DOI: https://doi.org/10.1051/jp4:19998133

PDF (2.182 MB)

Optical properties of ultra-thin low pressure chemically vapor deposited silicon films p. Pr8-1075

D. Davazoglou

DOI: https://doi.org/10.1051/jp4:19998134

PDF (401.8 KB)

Phase and surface roughness evolution for as-deposited LPCVD silicon films p. Pr8-1083

C. Cobianu, R. Plugaru, N. Nastase, S. Nastase, C. Flueraru, M. Modreanu, J. Adamczevska, W. Paszkowicz, J. Auleytner et P. Cosmin

DOI: https://doi.org/10.1051/jp4:19998135

PDF (1.834 MB)

Structure of mixed-phase LPCVD silicon films as a function of operating conditions p. Pr8-1091

B. de Mauduit, C. Bourgerette, V. Paillard, P. Puech et B. Caussat

DOI: https://doi.org/10.1051/jp4:19998136

PDF (2.255 MB)

Composition and magnetic properties of MOCVD processed thin films from nickelocene p. Pr8-1099

D. de Caro, L. Brissonneau, D. Boursier, R. Madar et C. Vahlas

DOI: https://doi.org/10.1051/jp4:19998137

PDF (437.5 KB)

Correlations between stress and microstructure into LPCVD silicon films p. Pr8-1107

P. Temple-Boyer, B. de Mauduit, B. Caussat et J.P. Couderc

DOI: https://doi.org/10.1051/jp4:19998138

PDF (718.5 KB)

LPCVD amorphous silicon carbide films, properties and microelectronics applications p. Pr8-1115

I. Kleps et A. Angelescu

DOI: https://doi.org/10.1051/jp4:19998139

PDF (1.195 MB)

CVD of mono and double-layers on Si-B-N-C fibres p. Pr8-1123

K. Nestler, D. Dietrich, A. Preidel, K. Weise, S. Stöckel, N. Meyer et G. Marx

DOI: https://doi.org/10.1051/jp4:19998140

PDF (1.972 MB)

Chemical and structural analysis of crystalline carbon nitride thin films prepared by electron cyclotron resonance plasma sputtering process p. Pr8-1131

Y. Tani, Y. Aoi et E. Kamijo

DOI: https://doi.org/10.1051/jp4:19998141

PDF (862.7 KB)

XPS study of CVD silicon thin films deposited on various substrates from SiH₄ gaseous precursor p. Pr8-1139

R. Berjoan, D. Perarnau et B. Caussat

DOI: https://doi.org/10.1051/jp4:19998142

PDF (363.3 KB)

Hybrid plasma polymerized membranes from organosilicon precursors for gas separation p. Pr8-1147

S. Roualdes, N. Hovnanian, A. van der Lee, J. Sanchez et J. Durand

DOI: https://doi.org/10.1051/jp4:19998143

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A new In_0.5Ga_0.5P/GaAs double heterojunction bipolar transistor (DHBT) prepared by MOCVD p. Pr8-1155

W.C. Liu, S.Y. Cheng, H.J. Pan, J.Y. Chen, W.C. Wang, S.C. Feng et K.H. Yu

DOI: https://doi.org/10.1051/jp4:19998144

PDF (233.5 KB)

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor p. Pr8-1163

W.C. Liu, H.J. Pan, S.Y. Cheng, W.C. Wang, J.Y. Chen, S.C. Feng et K.H. Yu

DOI: https://doi.org/10.1051/jp4:19998145

PDF (232.5 KB)

High breakdown n⁺-GaAs/δ-doped(p⁺)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD p. Pr8-1171

W.C. Liu, W.L. Chang, H.J. Pan, J.Y. Chen, W.C. Wang, K.H. Yu et S.C. Feng

DOI: https://doi.org/10.1051/jp4:19998146

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Application of Raman spectrometry for the characterization of complex oxide thin films grown by MOCVD p. Pr8-1179

B. Güttler, O.Yu. Gorbenko, M.A. Novozhilov, S.V. Samoilenkov, V.A. Amelichev, G. Wahl et H.W. Zandbergen

DOI: https://doi.org/10.1051/jp4:19998147

PDF (420.3 KB)

Mechanical reinforcement of carbon foam by hafnium carbide deposit p. Pr8-1187