Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-597-Pr8-604
DOI: 10.1051/jp4:1999875

MOCVD of Ni and Ni₃C films from Ni(dmen)₂(tfa)₂

L. Brissonneau¹, A. Kacheva¹, F. Senocq¹, J.-K. Kang², S.-W. Rhee², A. Gleizes¹ and C. Vahlas<sup>1

1</sup>  Laboratoire Interfaces et Matériaux, INPT-CNRS, École Nationale Supérieure de Chimie de Toulouse, 118 route de Narbonne, 31077 Toulouse cedex 4, France
²  Laboratory of Advanced Materials Processing, Department of Chemical Engineering, Pohang University of Science and Technology, POSTECH, San 31 Hyoja-dong, Nam-gu, Pohang, Kyungbuk, Korea

Abstract
In this study results are reported on the transport and decomposition behavior of a trifluoroacetato complex of formula Ni(dmen)₂(tfa)₂, in view of its use as a precursor for the MOCVD of Ni. It is shown that Ni(dmen)₂(tfa)₂ can be sublimed up to 190 °C without decomposition with, however, a relatively low partial pressure. MOCVD of Ni films from this precursor on silicon and on silica are also reported, performed at temperatures varying between 275 °C and 350 °C. It was found that the process is kinetically controlled. Films are crystalline, present a granular morphology and, depending on operating conditions, are composed of Ni, of metastable nickel carbide Ni₃C or of mixtures thereof. The carbon content decreases with decreasing deposition temperature and with increasing hydrogen flow rate. It is also higher in the first deposited layers, revealing a different decomposition mechanism of the precursor on an inert relatively to a metallic surface. Although processing conditions have not been optimized, MOCVD of Ni films from this family of complexes appears promising. However, modifications of the structure of Ni(dmen)₂(tfa)₂ are necessary to increase its volatility and consequently the growth rate of the films.

© EDP Sciences 1999