| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | Pr8-709 - Pr8-716 | |
| DOI | https://doi.org/10.1051/jp4:1999889 | |
J. Phys. IV France 09 (1999) Pr8-709-Pr8-716
DOI: 10.1051/jp4:1999889
Volatile surfactant assisted MOCVD of oxide materials
A.A. Molodyk1, A.R. Kaul1, O.Yu. Gorbenko1, M.A. Novojilov1, I.E. Korsakov1 and G. Wahl21 Division of Inorganic Chemistry, Department of Chemistry, Moscow State University, 119899 Moscow, Russia
2 Institute fuer Oberflaechentechnik und Plasmatechnische Werkstoffentwicklung, Technische Universitaet Braunschweig, Bienroder Weg 53, 38108 Braunschweig, Germany
Abstract
a new approach to improve the crystalline quality of MOCVD derived oxide films is proposed. The approach is to deposit the films in the presence of volatile surfactants, thus it is named Volatile Surfactant Assisted MOCVD (VSA MOCVD). The surfactants are low melting volatile oxides, particularly, PbO and Bi2O3, which have been used in our work. The approach was examined in the deposition of BaTiO3, LaAlO3, MgAl2O4, CeO2, and ZrO2 (Y2O3) epitaxial films. Improved crystallinity and surface morphology of the VSA MOCVD derived films in comparison with the films deposited using thermal MOCVD were evidenced with XRD, HREM, AFM, EDX and RBS characterizations. Also the effects of surfactants on film composition and deposition rate were studied and discussed. A model of the process is proposed.
© EDP Sciences 1999