High breakdown n+-GaAs/δ-doped(p+)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W.C. Liu; W.L. Chang; H.J. Pan; J.Y. Chen; W.C. Wang; K.H. Yu; S.C. Feng

doi:doi:10.1051/jp4:19998146

Numéro		J. Phys. IV France Volume 09, Numéro PR8, September 1999 Proceedings of the Twelfth European Conference on Chemical Vapour Deposition


Page(s)		Pr8-1171 - Pr8-1177
DOI		https://doi.org/10.1051/jp4:19998146

Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-1171-Pr8-1177
DOI: 10.1051/jp4:19998146

High breakdown n⁺-GaAs/δ-doped(p⁺)-GaInP/n-GaAs heterojunction camel-gate FET grown by LP-MOCVD

W.C. Liu, W.L. Chang, H.J. Pan, J.Y. Chen, W.C. Wang, K.H. Yu and S.C. Feng

Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, China

Abstract
This paper reports on the characteristics of n⁺-GaAs/δ-doped(p⁺)-GaInP/n-GaAs camel-gate heterojunction field-effect transistor (CAMFET) with the triple-step doped-channel. Due to the newly designed structure, the measured gate-drain turn-on and breakdown voltages are as high as 1.6 and 40 V for a fabricated 1x100 µm² device, respectively. Furthermore, the measured maximum transconductance is 145 mS/mm with the current gain cut-off frequency _T of 17 GHz and the maximum oscillation frequency _max of 33 GHz, respectively. Based on excellent device characteristics, the studied device shows a promise for circuit applications.