| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-769 - Pr8-775 | |
| DOI | https://doi.org/10.1051/jp4:1999897 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-769-Pr8-775
DOI: 10.1051/jp4:1999897
Institute of Inorganic Chemistry, SB RAS, Novosibirsk-90, Russia
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-769-Pr8-775
DOI: 10.1051/jp4:1999897
RPECVD thin silicon carbonitride films using hexamethyldisilazane
N.I. Fainer, M.L. Kosinova, Yu.M. Rumyantsev and F.A. KuznetsovInstitute of Inorganic Chemistry, SB RAS, Novosibirsk-90, Russia
Abstract
The thin films of silicon carbonitride were synthesised by remote plasma enhanced chemical vapour deposition at low pressure (10-2-10-1 Torr) and low temperatures (473-773 K). Hexamethyldisilazane (Si2NH(CH3)6) was used as a volatile single-source precursor. Helium was used as a dilution gas. The thickness, optical characteristics, element contents, types of chemical bonds, crystalline structure, phase composition and microhardness of these films were investigated in dependence on the growth conditions.
© EDP Sciences 1999