Modeling of silicon epitaxial growth with SiHCl3 in a CVD barrel reactor at atmospheric pressure

E. de Paola; P. Duverneuil; A. Langlais; M. Nguyen

doi:doi:10.1051/jp4:1999827

Numéro		J. Phys. IV France Volume 09, Numéro PR8, September 1999 Proceedings of the Twelfth European Conference on Chemical Vapour Deposition


Page(s)		Pr8-221 - Pr8-228
DOI		https://doi.org/10.1051/jp4:1999827

Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-221-Pr8-228
DOI: 10.1051/jp4:1999827

Modeling of silicon epitaxial growth with SiHCl₃ in a CVD barrel reactor at atmospheric pressure

E. de Paola¹, P. Duverneuil¹, A. Langlais² and M. Nguyen²

¹ UMR 5503 du CNRS, ENSIGC, 18 chemin de la Loge, 31078 Toulouse cedex 4, France
² EPITECH, Sumitomo Sitix Group, Route de Guernes, Follainville-Dennemmont, 78520 Limay, France

Abstract
The growth rate of epitaxial Si in a chemical vapor deposition barrel reactor was investigated. Trichlorosilane was employed as a precursor diluted in H₂ carrier gas at 1 atm reactor pressure. The growth rates and the fluid dynarnics were analyzed using a software package, ESTET. A new complete chemical model was introduced considering chemical reactions in the gas phase and on the solid surfaces. Finally, the predictive growth rate given by this model was in a good agreement with experimental results for different positions of the wafer on the support and for several operating conditions.