Numéro
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
Page(s) Pr8-425 - Pr8-430
DOI https://doi.org/10.1051/jp4:1999853
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-425-Pr8-430

DOI: 10.1051/jp4:1999853

Phase controlled low-pressure chemical vapor deposition of iron(di)sulfide

B. Meester, R.A. du Bois, A. Goossens and J. Schoonman

Delft Interfaculty Research Center, Renewable Energy, Laboratory for Inorganic Chemistry, Delft University of Technology, Julianalaan 136, 2628 BL Delft, The Netherlands


Abstract
Thin films of iron(di)sulfide pyrite, marcasite, and pyrrhotite have been prepared on glass substrates by low-pressure chemical vapor deposition (LPCVD) from iron(III)acetylacetonate (Fe(acac)3) and tert-butyl disulfide (TBDS), using a cold-wall LPCVD reactor. It is found that the temperature determines the crystalline phases of the films. Deposition temperatures of 350 and 375°C yield pure polycrystalline pyrite with an indirect and a direct band gap of 0.95 and 1.45 eV, respectively. By increasing the temperature up to 425°C, a mixture of pyrite, marcasite, and pyrrothite is formed, while between 425 and 450 °C mixtures of pyrite and pyrrhotite are obtained. Temperatures of 480 °C cause the formation of pyrrothite films.



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