Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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Page(s) | Pr8-373 - Pr8-380 | |
DOI | https://doi.org/10.1051/jp4:1999846 |
J. Phys. IV France 09 (1999) Pr8-373-Pr8-380
DOI: 10.1051/jp4:1999846
Thermodynamical and experimental conditions of hafnium carbide chemical vapour deposition
P. Sourdiaucourt1, A. Derré2, P. Delhaès2 and P. David11 Commissariat à l'Énergie Atomique, BP. 16, 37260 Monts, France
2 CNRS, Centre de Recherche Paul Pascal, avenue Schweitzer, 33600 Pessac, France
Abstract
Ceramic films are increasingly used to coat a large variety of materials and chemical vapour deposition is thus an appropriate process to get high performance mechanical parts. In order to reinforce carbon foams for high temperature applications, the possibility of covering such a substrate by a few micrometers thick deposit of hafnium carbide is investigated. The reason why is that hafnium carbide is the binary carbide that exhibits the higher melting point (≈3850°C) whereas the temperature range for the expected application is as high as 3000°C. The conditions of HfC deposit are first studied by means of thermodynamical calculations. A few trends of the chemical system are pointed out which allow us to select appropriate gaseous precursors, experimental parameters and the associated variation range. Experimentally, the significant parameters are evidenced using experimental planning method. An attempt to correlate the experimental and calculated main results is discussed.
© EDP Sciences 1999