| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
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|---|---|---|
| Page(s) | Pr8-575 - Pr8-582 | |
| DOI | https://doi.org/10.1051/jp4:1999872 | |
J. Phys. IV France 09 (1999) Pr8-575-Pr8-582
DOI: 10.1051/jp4:1999872
MOCVD of ferroelectric thin films
C. Schmidt1, W. Lehnert1, T. Leistner2, L. Frey2 and H. Ryssel1, 21 Fraunhofer Institut Integrierte Schaltungen, Schottky-Strasse 10, 91058 Erlangen, Germany
2 Lehrstuhl Elektronische Bauelemente, Universitaet Erlangen, Cauerstrasse 6, 91058 Erlangen, Germany
Abstract
Ferroelectric thin films of lead titanate (PbTiO3) and lead zirconate titanate (PZT) were grown in a cold-wall low-pressure chemical vapor deposition reactor on silicon substrates with diameters up to 150mm using liquid metal organic precursors including a novel zirconium precursor. Film thickness ranged from 10nm to 700nm. The films were characterized regarding their electrical, optical, and structural properties depending on film composition and deposition conditions. In this paper, we report our results regarding composition effects, the electrical polarization behavior and optical properties like refractive indices and absorption coefficient, which were investigated by spectroscopic ellipsometry for a wide wavelength range. Furthermore some temperature dependent effects of the platinum electrodes are described.
© EDP Sciences 1999