| Numéro |
J. Phys. IV France
Volume 09, Numéro PR8, September 1999
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
|
|
|---|---|---|
| Page(s) | Pr8-403 - Pr8-410 | |
| DOI | https://doi.org/10.1051/jp4:1999850 | |
Proceedings of the Twelfth European Conference on Chemical Vapour Deposition
J. Phys. IV France 09 (1999) Pr8-403-Pr8-410
DOI: 10.1051/jp4:1999850
1 Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
2 Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, U.K.
© EDP Sciences 1999
J. Phys. IV France 09 (1999) Pr8-403-Pr8-410
DOI: 10.1051/jp4:1999850
Atmospheric pressure chemical vapour deposition of tin sulfide thin films
I.P. Parkin1, L.S. Price1, A.M.E. Hardy1, R.J.H. Clark1, T.G. Hibbert2 and K.C. Molloy21 Department of Chemistry, University College London, 20 Gordon Street, London WC1H 0AJ, U.K.
2 Department of Chemistry, University of Bath, Claverton Down, Bath BA2 7AY, U.K.
Abstract
Tin sulfide thin films have been laid down on glass substrates by APCVD of tin tetrabromide with hydrogen sulfide. The temperature of the substrate was varied over the range 250 to 600 °C. Flow rates of hydrogen sulfide into the reactor were altered from 0.6 to 1.8 dm3 min-1. The films were characterised by glancing-angle X-ray diffraction, Raman microscopy, EDAX and SEM. It is evident that at substrate temperatures from 250 to 450 °C tin(IV) sulfide is deposited, whereas at temperatures in excess of 550 °C tin(II) sulfide is deposited. At intermediate temperatures mixed-valent Sn2S3 is formed.
© EDP Sciences 1999