MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

W.C. Liu; H.J. Pan; S.Y. Cheng; W.C. Wang; J.Y. Chen; S.C. Feng; K.H. Yu

doi:doi:10.1051/jp4:19998145

Numéro		J. Phys. IV France Volume 09, Numéro PR8, September 1999 Proceedings of the Twelfth European Conference on Chemical Vapour Deposition


Page(s)		Pr8-1163 - Pr8-1169
DOI		https://doi.org/10.1051/jp4:19998145

Proceedings of the Twelfth European Conference on Chemical Vapour Deposition

J. Phys. IV France 09 (1999) Pr8-1163-Pr8-1169
DOI: 10.1051/jp4:19998145

MOCVD grown δ-doped InGaP/GaAs heterojunction bipolar transistor

W.C. Liu, H.J. Pan, S.Y. Cheng, W.C. Wang, J.Y. Chen, S.C. Feng and K.H. Yu

Department of Electrical Engineering, National Cheng-Kung University, 1 University Road, Tainan, Taiwan, China

Abstract
An InGaP/GaAs heterojunction bipolar transistor (HBT) with an 50Å undoped spacer and δ-doped sheet at B-E heterointerface is fabricated and studied. A common-emitter current gain of 280 and an offset voltage as small as 55mV are obtained, respectively. This results show that high current gain and low offset voltage can be attained simultaneously without the passivation of E-B junction. From the experimental results, it shows that the potential spike is indeed reduced by the employment of an δ-doped layer simultaneously.