Journal de Physique IV

EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORS p. C6-3

P.R. WILSHAW, T.S. FELL and M.D. COTEAU

DOI: https://doi.org/10.1051/jp4:1991601

QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC p. C6-15

J. SCHREIBER and S. HILDEBRANDT

DOI: https://doi.org/10.1051/jp4:1991602

ANALYSIS OF THE RECOMBINATION VELOCITY AND OF THE EBIC AND CATHODOLUMINESCENCE CONTRAST AT A DISLOCATION p. C6-21

R.J. TARENTO and Y. MARFAING

DOI: https://doi.org/10.1051/jp4:1991603

NUMERICAL ANALYSIS OF THE TEMPERATURE DEPENDENCE OF EBIC AND CL CONTRASTS p. C6-23

M. ECKSTEIN and H.-U. HABERMEIER

DOI: https://doi.org/10.1051/jp4:1991604

RECENT STATE OF THE THEORY OF THE METHODS OF INDUCED CONCENTRATION p. C6-29

A.V. SAMSONOVICH, V.V SIROTKIN, N.G. USHAKOV and S.I. ZAITSEV

DOI: https://doi.org/10.1051/jp4:1991605

RECOMBINATION MECHANISM AT DISLOCATIONS IN GaAs EBIC CONTRAST STUDY p. C6-35

B. SIEBER and J.L. FARVACQUE

DOI: https://doi.org/10.1051/jp4:1991606

RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS p. C6-39

S. HILDEBRANDT, J. SCHREIBER and W. HERGERT

DOI: https://doi.org/10.1051/jp4:1991607

DISCUSSION OF THE CONVERGENCE PROPERTIES OF THE PERTURBATION SERIES USED IN THE CALCULATION OF EBIC- AND CL-CONTRASTS p. C6-45

W. HERGERT, L. PASEMANN and S. HILDEBRANDT

DOI: https://doi.org/10.1051/jp4:1991608

COMPUTER PROCESSING OF EBIC SIGNALS p. C6-51

O.V. KONONCHUK, N.G. USHAKOV, E.B. YAKIMOV and S.I. ZAITSEV

DOI: https://doi.org/10.1051/jp4:1991609

INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL p. C6-57

G. OELGART and N. PUHLMANN

DOI: https://doi.org/10.1051/jp4:1991610

INFLUENCE OF THE DEPLETED ZONE ON THE EBIC CONTRAST : A SIMPLE DERIVATION. APPLICATION TO THE DISLOCATION AND GRAINBOUNDARY CASES p. C6-63

D.E. MEKKI and R.J. TARENTO

DOI: https://doi.org/10.1051/jp4:1991611

INFLUENCE OF THE INJECTION ON THE ELECTRON-BEAM INDUCED CURRENT COLLECTION EFFICIENCY p. C6-71

D.E. MEKKI and R.J. TARENTO

DOI: https://doi.org/10.1051/jp4:1991612

IN PLANE INVESTIGATION OF SILICON GRAIN BOUNDARIES - MODEL AND EXPERIMENT p. C6-75

M. STEMMER

DOI: https://doi.org/10.1051/jp4:1991613

THEORETICAL STUDY OF HIGH INJECTION EFFECTS IN EBIC MEASUREMENTS OF GRAIN BOUNDARY RECOMBINATION VELOCITY IN SILICON p. C6-77

J.-L. MAURICE and Y. MARFAING

DOI: https://doi.org/10.1051/jp4:1991614

ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERS p. C6-83

A. ROMANOWSKI

DOI: https://doi.org/10.1051/jp4:1991615

DEVELOPMENTS OF IRBIC AND QIRBIC IN DEFECT STUDIES : A REVIEW p. C6-89

A. CAVALLINI and A. CASTALDINI

DOI: https://doi.org/10.1051/jp4:1991616

DIRECT MEASUREMENT OF THE LOCAL DIFFUSION LENGTH GRAIN BOUNDARIES BY EBIC WITHOUT A SCHOTTKY CONTACT p. C6-101

J. PALM and H. ALEXANDER

DOI: https://doi.org/10.1051/jp4:1991617

MODELLING OF THE ELECTRON-BEAM-INDUCED CURRENT AT A METAL-p-Si SCHOTTKY CONTACT : COMPARISON WITH EXPERIMENT p. C6-107

A. ZOZIME, I. DELIDAIS and Y. MARFAING

DOI: https://doi.org/10.1051/jp4:1991618

CATHODOLUMINESCENCE QUANTUM WELL STUDIES p. C6-117

C.A. WARWICK

DOI: https://doi.org/10.1051/jp4:1991619

HIGH RESOLUTION TEM-CL FROM THE CROSS-SECTIONAL SPECIMENS OF GaAs/AlGaAs QWs p. C6-125

J. WANG, J.W. STEEDS and M. HENINI

DOI: https://doi.org/10.1051/jp4:1991620

DIFFUSION LENGTH MEASUREMENTS OF HETEROJUNCTION THIN FILMS BY JUNCTION-EBIC p. C6-131

G. JÄGER-WALDAU, D. SCHMID and A. JÄGER-WALDAU

DOI: https://doi.org/10.1051/jp4:1991621

AN INVESTIGATION OF CHARGE STATES IN ELECTRON IRRADIATED LOW NITRIDED SILICONDIOXIDE FILMS p. C6-137

V. RANK, M. KOPP, G. WEIDNER and M. NOVAKOWSKI

DOI: https://doi.org/10.1051/jp4:1991622

LUMINESCENCE CHARACTERIZATION OF GaAs SINGLE QUANTUM WELLS p. C6-143

R. MITDANK, H. HAEFNER, E. SCHULZE and G. OELGART

DOI: https://doi.org/10.1051/jp4:1991623

MATERIALS AND INTERFACES CHARACTERIZATION BY MICRO-RAMAN SPECTROSCOPY p. C6-151

P.V. HUONG

DOI: https://doi.org/10.1051/jp4:1991624

NEW DEVELOPMENT IN CONFOCAL SCANNING OPTICAL MICROSCOPY AND ITS APPLICATION TO THE STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SEMICONDUCTORS p. C6-163

P.S. APLIN

DOI: https://doi.org/10.1051/jp4:1991625

CHARACTERIZATION OF POLYCRYSTALLINE SILICON BY EBIC p. C6-173

M. KITTLER, J. LÄRZ, G. MORGENSTERN and W. SEIFERT

DOI: https://doi.org/10.1051/jp4:1991626

EBIC INVESTIGATIONS OF EXTENDED DEFECTS IN CdTe p. C6-181

G.N. PANIN and E.B. YAKIMOV

DOI: https://doi.org/10.1051/jp4:1991627

QUANTITATIVE DETERMINATION OF THE RECOMBINING ACTIVITIES OF 60° AND SCREW DISLOCATIONS IN FZ AND CZ SILICON p. C6-187

B. PICHAUD, F. MINARI and S. MARTINUZZI

DOI: https://doi.org/10.1051/jp4:1991628

NEW POSSIBILITIES OF EBIC FOR DISLOCATION STUDY p. C6-193

E.B. YAKIMOV

DOI: https://doi.org/10.1051/jp4:1991629

LBIC INVESTIGATION OF PHOSPHORUS GETTERED MULTICRYSTALLINE SILICON WAFERS p. C6-199

I. PERICHAUD, M. STEMMER and S. MARTINUZZI

DOI: https://doi.org/10.1051/jp4:1991630

ON THE EBIC BRIGHT CONTRAST AT THE DOT-AND-HALO FEATURES IN GaAs p. C6-205

C. FRIGERI

DOI: https://doi.org/10.1051/jp4:1991631

THE EFFECT OF DIFFERENT TRANSITION METALS ON THE RECOMBINATION EFFICIENCY OF DISLOCATIONS p. C6-211

T.S. FELL and P.R. WILSHAW

DOI: https://doi.org/10.1051/jp4:1991632

INVESTIGATION OF ELECTRICAL PROPERTY INHOMOGENEITIES FORMED BY PLASMA ETCHING p. C6-217

I.E. BONDARENKO, S.V. KOVESHNIKOV, E.B. YAKIMOV and N.A. YARYKIN

DOI: https://doi.org/10.1051/jp4:1991633

TEMPERATURE DEPENDENCE OF THE SPACE-CHARGE-REGION WIDTH OF A Ti-nGaAs SCHOTTKY DIODE EBIC STUDY p. C6-223

B. SIEBER and P. CARTON

DOI: https://doi.org/10.1051/jp4:1991634

CATHODOLUMINESCENCE AND ELECTRON BEAM INDUCED CURRENT STUDY OF HYDROGEN TREATMENT OF p-n GaAs JUNCTION p. C6-225

D. ARAÚJO, L. PAVESI, NGUYEN HONG KY, J.D. GANIÈRE and F.K . REINHART

DOI: https://doi.org/10.1051/jp4:1991635

ELECTRICAL ACTIVITY OF Al DOPED SILICON ∑ 9 BICRYSTAL BY S.T.E.B.I.C. p. C6-231

T. BENABBAS and J.-Y. LAVAL

DOI: https://doi.org/10.1051/jp4:1991636

INFRARED LBIC SCAN MAPS APPLIED TO ALUMINIUM GETTERED MULTICRYSTALLINE SILICON WAFERS p. C6-237

J.Y. NATOLI, M. PASQUINELLI, F. FLORET and S. MARTINUZZI

DOI: https://doi.org/10.1051/jp4:1991637

THERMAL WAVE PROBING OF THE OPTICAL, ELECTRONIC AND THERMAL PROPERTIES OF SEMICONDUCTORS p. C6-241

D. FOURNIER and B.C. FORGET

DOI: https://doi.org/10.1051/jp4:1991638

CHARACTERIZATION OF MULTILAYERS ADHERENCE ON GaAs SUBSTRATE BY INFRARED IMAGING AND CORRELATION TO ASSOCIATED MICROSCOPY STUDIES p. C6-253

J.M. TEILLERIE, M. THOLOMIER and J.E BRESSE

DOI: https://doi.org/10.1051/jp4:1991639

VOLTAGE CONTRAST p. C6-259

P. GIRARD

DOI: https://doi.org/10.1051/jp4:1991640

HIGH RESOLUTION ELECTRON BEAM INJECTION IN SEMICONDUCTORS USING A SCANNING TUNNELING MICROSCOPE p. C6-271

S.F. ALVARADO, Ph. RENAUD and H.P. MEIER

DOI: https://doi.org/10.1051/jp4:1991641

ELECTRONIC TRANSPORT PROPERTIES CHARACTERIZATION OF SILICON WAFERS BY MODULATED PHOTOREFLECTANCE p. C6-277

B.C. FORGET and D. FOURNIER

DOI: https://doi.org/10.1051/jp4:1991642

USE OF SCANNING ELECTRON ACOUSTIC MICROSCOPY FOR III-V COMPOUNDS DEVICES ANALYSIS p. C6-285

J. F. BRESSE

DOI: https://doi.org/10.1051/jp4:1991643

CHARACTERIZATION OF SEMIINSULATING GaAs : Cr BY SCANNING ELECTRON ACOUSTIC MICROSCOPY p. C6-295

B. MÉNDEZ and J. PIQUERAS

DOI: https://doi.org/10.1051/jp4:1991644

CHARACTERIZATION OF AlGaAs/GaAs HBTs BY LOCALIZED FILTERED CATHODOLUMINESCENCE p. C6-297

C. DUBON-CHEVALLIER, A.C. PAPADOPOULO, V. AMARGER, C. BESOMBES, B. DESCOUTS and A.M. POUGNET

DOI: https://doi.org/10.1051/jp4:1991645

EXCITATION-ENHANCED DISLOCATION MOBILITY IN SEMICONDUCTORS p. C6-305

G. VANDERSCHAEVE, C. LEVADE, A. FARESS, J.J. COUDERC and D. CAILLARD

DOI: https://doi.org/10.1051/jp4:1991646

EBIC AND CL STUDY OF LASER DEGRADATION p. C6-317

P. HENOC, R. BENETTON-MARTINS and B. AKAMATSU

DOI: https://doi.org/10.1051/jp4:1991647

LIMITATIONS AND FURTHER DEVELOPMENT OF BEAM INJECTION METHODS. A SYNTHESIS p. C6-325

A. JAKUBOWICZ

DOI: https://doi.org/10.1051/jp4:1991648

CAPACITANCE TRANSIENT SPECTROSCOPY (DLTS) OF EXTENDED DEFECTS IN SEMICONDUCTORS p. C6-335

U. GNAUERT, J. KRONEWITZ, M. SEIBT and W. SCHRÖTER

DOI: https://doi.org/10.1051/jp4:1991649

A SUPERIOR CATHODOLUMINESCENCE SPECTRAL ANALYSIS AND IMAGING SYSTEM p. C6-337

P.J. WRIGHT

DOI: https://doi.org/10.1051/jp4:1991650

A NOVEL COMMERCIAL SCANNING-DLTS EQUIPMENT p. C6-343

O. BREITENSTEIN and H. RAITH

DOI: https://doi.org/10.1051/jp4:1991651

Le Journal de Physique IV

Volume 01 / No C6 (Décembre 1991)

Beam Injection Assessment of Defects in Semiconductors2nd International Workshop