2nd International Workshop
J. Phys. IV France 01 (1991) C6-3-C6-14
EBIC CONTRAST OF DEFECTS IN SEMICONDUCTORSP.R. WILSHAW, T.S. FELL and M.D. COTEAU
Department of Materials, Parks Road, GB-Oxford OX1 3PH, Great-Britain
The experimental requirements for relating EBIC contrast measurements to the recombination strength of defects in non-ideal specimens is discussed. Three criteria are given which must be met for such an interpretation of measurements to be made. In the second part of the paper the mechanism for recombination at dislocations in silicon is described together with experimental results from clean and decorated dislocations. Details are given of those situations in which copper contamination does not increase dislocation activity. Finally work on decorated stacking faults in silicon is presented.
© EDP Sciences 1991