2nd International Workshop
J. Phys. IV France 01 (1991) C6-83-C6-88
ADVANTAGES OF ac-EBIC IN DETERMINING THE SEMICONDUCTOR PARAMETERSA. ROMANOWSKI
Institute of Electron Technology, Janiszewsiego 11/17, PL-50-372 Wroclaw, Poland
The influence of trapping centres on the phase shift of the short circuit current generated by point source is analyzed. It is shown that maximum value of the phase corresponds to emission coefficient. Minority trapping centres of the Cu implanted n+p shallow junction are measured by ac-LBIC and ac-EBIC.
© EDP Sciences 1991