| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-143 - C6-148 | |
| DOI | https://doi.org/10.1051/jp4:1991623 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-143-C6-148
DOI: 10.1051/jp4:1991623
1 Humboldt Universität zu Berlin, Fachbereich Physik, Institut für Ionen- und Elektronen-physik, Invalidenstr. 110, D-1040 Berlin, Germany
2 Universität Leipzig, Fachbereich Physik, Linnéstr. 5, D-1070 Leipzig, Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-143-C6-148
DOI: 10.1051/jp4:1991623
LUMINESCENCE CHARACTERIZATION OF GaAs SINGLE QUANTUM WELLS
R. MITDANK1, H. HAEFNER1, E. SCHULZE1 and G. OELGART21 Humboldt Universität zu Berlin, Fachbereich Physik, Institut für Ionen- und Elektronen-physik, Invalidenstr. 110, D-1040 Berlin, Germany
2 Universität Leipzig, Fachbereich Physik, Linnéstr. 5, D-1070 Leipzig, Germany
Abstract
The peculiarities of the photo- and cathodoluminescence of MOVPE grown single quantum wells containing impurities are investigated. The investigations reveal monolayerfluctuations with a lateral extension of about 10 µm. The incorporation of carbon in the thicker islands is shown using micrographs of spectrally resolved cathodoluminescence. Extrinsic radiative transitions involving the impurities are found also in the barrier above that islands which contain impurities. These inhomogenities are proposed to be connected with dislocations emanating from the substrate and penetrating the sandwiched layer structure.
© EDP Sciences 1991