| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-29 - C6-34 | |
| DOI | https://doi.org/10.1051/jp4:1991605 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-29-C6-34
DOI: 10.1051/jp4:1991605
Institute of Microelectronics Technology, Academy of Sciences of USSR, Chernogolovka, Moscow District 142432, USSR
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-29-C6-34
DOI: 10.1051/jp4:1991605
RECENT STATE OF THE THEORY OF THE METHODS OF INDUCED CONCENTRATION
A.V. SAMSONOVICH, V.V SIROTKIN, N.G. USHAKOV and S.I. ZAITSEVInstitute of Microelectronics Technology, Academy of Sciences of USSR, Chernogolovka, Moscow District 142432, USSR
Abstract
A set of diagnostic methods called as methods of induced concentration (MIC) results in the same signal equation. The equation allows one to solve the direct and inverse problems. The method of Q-variation is described and its accuracy for many-electrode EBIC is numerically estimated. Nontraditional application of MIC is argued for relief investigation.
© EDP Sciences 1991