| Issue |
J. Phys. IV France
Volume 01, Number C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-75 - C6-76 | |
| DOI | https://doi.org/10.1051/jp4:1991613 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-75-C6-76
DOI: 10.1051/jp4:1991613
Laboratoire de Photoélectricité des Semiconducteurs, Case 231, Faculté des Sciences et Techniques de Marseille, F-13397 Marseille Cedex 13, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-75-C6-76
DOI: 10.1051/jp4:1991613
IN PLANE INVESTIGATION OF SILICON GRAIN BOUNDARIES - MODEL AND EXPERIMENT
M. STEMMERLaboratoire de Photoélectricité des Semiconducteurs, Case 231, Faculté des Sciences et Techniques de Marseille, F-13397 Marseille Cedex 13, France
Without abstract
© EDP Sciences 1991
First page of the article
