| Issue |
J. Phys. IV France
Volume 01, Number C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-57 - C6-62 | |
| DOI | https://doi.org/10.1051/jp4:1991610 | |
2nd International Workshop
J. Phys. IV France 01 (1991) C6-57-C6-62
DOI: 10.1051/jp4:1991610
INVESTIGATION OF MINORITY CARRIER RECOMBINATION IN GaAs : Sn BY MEANS OF EBIC AND CL
G. OELGART1 and N. PUHLMANN21 Sektion Physik der Universität Leipzig, Linnèstrasse 5, D-7010 Leipzig, Germany
2 Sektion Physik der Humboldt-Universität zu Berlin, Invalidenstrasse 110, D-1040 Berlin, Germany
Abstract
The recombination properties of minority carriers have been determined from EBIC and CL measurements versus the primary electron beam energy on step cooling LPE grown n-type GaAs : Sn [MATH] in the temperature range [MATH]. Based on the lifetime and internal quantum yield analysis as a function of the electron concentration we determined the radiative recombination coefficient to B- 5*10-11 cm3s-1 and the internal quantum yield increases from 3% (n0=3*1016cm-3) to 30% (n0=8*1017cm-3) at room temperature. The increase in external luminescence strength versus diminished temperature is caused by the lowered self-absorption and by the rising internal quantum efficiency. Based on the diffusion length and internal quantum yield analysis vs the temperature, the non-radiative recombination due to the deep Sn-acceptor was shown on strongly doped samples [MATH] in the range [MATH].
© EDP Sciences 1991