2nd International Workshop
J. Phys. IV France 01 (1991) C6-285-C6-293
USE OF SCANNING ELECTRON ACOUSTIC MICROSCOPY FOR III-V COMPOUNDS DEVICES ANALYSISJ. F. BRESSE
France Telecom, Centre National d'Etudes des Télécommunications, 196 avenue H. Ravera, F-92220 Bagneux, France
The use of scanning electron acoustic microscopy (SEAM) in III-V compounds devices is demonstrated. The order of magnitude of the attainable resolution is given, depending of the depth of the observed defect. A spatial resolution nearly equal to the spot size is attainable. Examples of the use of SEAM in III-V compounds devices are given. The adherence of metallic layers, Au and Au-Ti on GaAs have been studied by SEAM and compared with global adherence measurements. The case of strong adherence problems for a strained WMoGe layer on GaAs is also studied.
© EDP Sciences 1991