2nd International Workshop
J. Phys. IV France 01 (1991) C6-297-C6-301
CHARACTERIZATION OF AlGaAs/GaAs HBTs BY LOCALIZED FILTERED CATHODOLUMINESCENCEC. DUBON-CHEVALLIER, A.C. PAPADOPOULO, V. AMARGER, C. BESOMBES, B. DESCOUTS and A.M. POUGNET
FRANCE TELECOM, Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 avenue Henri Ravera, F-92220 Bagneux, France
AlGaAs/GaAs Heterojunction Bipolar Transistors processed with an implanted technology require a Mg implantation to contact the p-type GaAs base layer from the surface and also a low energy B implantation to eliminate the lateral diode between the n+ emitter contact layer and the converted p-type region. Low temperature cathodoluminescence spectroscopy has been used to investigate the damage induced by B implantation. An extensive analysis has then been carried out along chemical bevels to localize the damage induced by the B implantation inside the structure. Cathodoluminescence has also been used to optimize the annealing process which follows the Mg implantation in order to recover the defects induced by the implantation.
© EDP Sciences 1991