| Issue |
J. Phys. IV France
Volume 01, Number C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-39 - C6-44 | |
| DOI | https://doi.org/10.1051/jp4:1991607 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-39-C6-44
DOI: 10.1051/jp4:1991607
Martin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, Friedemann-Bach-Platz 6, D-4020 Halle (Saale), Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-39-C6-44
DOI: 10.1051/jp4:1991607
RECENT RESULTS IN THE THEORETICAL DESCRIPTION OF CL AND EBIC DEFECT CONTRASTS
S. HILDEBRANDT, J. SCHREIBER and W. HERGERTMartin-Luther-Universität Halle-Wittenberg, Fachbereich Physik, Friedemann-Bach-Platz 6, D-4020 Halle (Saale), Germany
Abstract
The theoretical description used for the analysis of beam-voltage dependent CL and EBIC contrasts from a surface-parallel dislocation is summarized. The importance of the use of a realistic carrier generation model is discussed and suitable methods of the evaluation of defect parameters (depth position, defect strength) are proposed.
© EDP Sciences 1991