2nd International Workshop
J. Phys. IV France 01 (1991) C6-193-C6-198
NEW POSSIBILITIES OF EBIC FOR DISLOCATION STUDYE.B. YAKIMOV
Institute of Microelectronics Technology and High Purity, Materials USSR Academy of Sciences, Chernogolovka, Moscow District 142432, USSR
The recent results of the EBIC investigations of dislocations in Si demonstrating the influence of point defect atmospheres on the characteristics of the EBIC contrast of the both charged and uncharged dislocations are discussed. It is shown that from such investigations characteristics of these atmospheres can be obtained.
© EDP Sciences 1991