| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-163 - C6-171 | |
| DOI | https://doi.org/10.1051/jp4:1991625 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-163-C6-171
DOI: 10.1051/jp4:1991625
H.H. Wills Physics Laboratory, Tyndall Avenue, GB-Bristol BS8 1TL, Great-Britain
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-163-C6-171
DOI: 10.1051/jp4:1991625
NEW DEVELOPMENT IN CONFOCAL SCANNING OPTICAL MICROSCOPY AND ITS APPLICATION TO THE STUDY OF ELECTRICALLY ACTIVE DEFECTS IN SEMICONDUCTORS
P.S. APLINH.H. Wills Physics Laboratory, Tyndall Avenue, GB-Bristol BS8 1TL, Great-Britain
Abstract
A description is given of the design and some early results from a new confocal scanning optical microscope. It is designed for the study of Photoluminescence but has a broad range of potential applications in materials science. The optical system is integrated with a helium cryostat to permit control of specimen temperature from ambient to 2K. Servomechanisms control the position of the specimen with respect to the focal point of the objective, to eliminate the effects of vibration and drift.
© EDP Sciences 1991