2nd International Workshop
J. Phys. IV France 01 (1991) C6-217-C6-222
INVESTIGATION OF ELECTRICAL PROPERTY INHOMOGENEITIES FORMED BY PLASMA ETCHINGI.E. BONDARENKO, S.V. KOVESHNIKOV, E.B. YAKIMOV and N.A. YARYKIN
Institute of Microelectronics Technology and High Purity Materials, USSR Academy of Sciences, Cherngolovka, Moscow District 142432, USSR
The possibility to use reactive ion etched Si crystals doped with gold as a model object for diffusion length profile reconstruction from the EBIC measurements has been discussed. It has been shown that the results of profile reconstruction from the EBIC measurements correlate well with the recombination center profiles obtained by DLTS.
© EDP Sciences 1991