QUANTITATIVE EVALUATION OF RECOMBINATION ACTIVITY OF DISLOCATIONS BY COMBINED SEM-CL/EBIC

Abstract
The methodology of quantitative SEM-CL/EBIC investigations for the evaluation of the recombination defect strength of individual dislocations in crystalline semiconductor samples is presented. The interpretation of the experiments is performed by using a unified theoretical description of CL and EBIC matrix signals inclusive of the defect contrasts. Full analysis of SEM-CL/EBIC studies on a semiconductor sample with surface Schottky barrier is discussed. The effective defect strength values corresponding to induced non-radiative recombination of dislocations in GaAs, GaAsP, GaP are deduced.