| Issue |
J. Phys. IV France
Volume 01, Number C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-63 - C6-69 | |
| DOI | https://doi.org/10.1051/jp4:1991611 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-63-C6-69
DOI: 10.1051/jp4:1991611
Laboratoire de Physique des Matériaux, 1 Place A. Briand, CNRS, Bellevue, F-92195 Meudon Cedex, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-63-C6-69
DOI: 10.1051/jp4:1991611
INFLUENCE OF THE DEPLETED ZONE ON THE EBIC CONTRAST : A SIMPLE DERIVATION. APPLICATION TO THE DISLOCATION AND GRAINBOUNDARY CASES
D.E. MEKKI and R.J. TARENTOLaboratoire de Physique des Matériaux, 1 Place A. Briand, CNRS, Bellevue, F-92195 Meudon Cedex, France
Abstract
The present article deals with a simple derivation of the modelisation of the EBIC contrast. It takes account of the recombination in the depleted zone (recombination velocity and finite diffusion length). It has been applied to the dislocation and grain boundary cases.
© EDP Sciences 1991