2nd International Workshop
J. Phys. IV France 01 (1991) C6-23-C6-28
NUMERICAL ANALYSIS OF THE TEMPERATURE DEPENDENCE OF EBIC AND CL CONTRASTSM. ECKSTEIN and H.-U. HABERMEIER
Max-Planck-Institut für Festkörperforschung, Heisenbergstrasse 1, D-7000 Stuttgart 80, Germany
Using simultaneous EBIC and CL measurements it is possible to extract the temperature dependence of the recombination efficiency from the temperature dependence of the defect contrasts, which in GaAs are dominated by the temperature dependence of the minority carrier diffusion length. Our measurements on dislocations in n-type GaAs indicate an electronic level of about 30meV away from a band edge related to the dislocations and give evidence for an electric field associated with the dislocation.
© EDP Sciences 1991