| Numéro |
J. Phys. IV France
Volume 01, Numéro C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-277 - C6-282 | |
| DOI | https://doi.org/10.1051/jp4:1991642 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-277-C6-282
DOI: 10.1051/jp4:1991642
Laboratoire d'Instrumentation, Univ. Pierre & Marie Curie, Paris VI ESPCI, 10 rue Vauquelin, F-75005 Paris, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-277-C6-282
DOI: 10.1051/jp4:1991642
ELECTRONIC TRANSPORT PROPERTIES CHARACTERIZATION OF SILICON WAFERS BY MODULATED PHOTOREFLECTANCE
B.C. FORGET and D. FOURNIERLaboratoire d'Instrumentation, Univ. Pierre & Marie Curie, Paris VI ESPCI, 10 rue Vauquelin, F-75005 Paris, France
Abstract
We have used the photoreflectance technique to characterize electronical transport properties of silicon wafers. By using the intermediate frequency range (1 kHz to 100 kHz) and selecting a proper excitation wavelength, it is possible to facilitate the characterization. In particular we show that this technique permits the determination of surface recombination velocity.
© EDP Sciences 1991