| Issue |
J. Phys. IV France
Volume 01, Number C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-317 - C6-322 | |
| DOI | https://doi.org/10.1051/jp4:1991647 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-317-C6-322
DOI: 10.1051/jp4:1991647
Centre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 Av. Henri Ravéra, F-92120 Bagneux, France
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-317-C6-322
DOI: 10.1051/jp4:1991647
EBIC AND CL STUDY OF LASER DEGRADATION
P. HENOC, R. BENETTON-MARTINS and B. AKAMATSUCentre National d'Etudes des Télécommunications, Laboratoire de Bagneux, 196 Av. Henri Ravéra, F-92120 Bagneux, France
Abstract
The first stages of Ga(Al)As laser degradation are studied by means of CL and EBIC measurements on cleaved facets of devices. Degradation by electron beam irradiation is compared to degradation during working. It is concluded that degradation starts in the depleted region with a loss of Si dopant electrical activity. Local degradation speed for Ga(Al)As epitaxial layers grown on either GaAs or Si substrates are compared.
© EDP Sciences 1991