| Issue |
J. Phys. IV France
Volume 01, Number C6, Décembre 1991
Beam Injection Assessment of Defects in Semiconductors2nd International Workshop |
|
|---|---|---|
| Page(s) | C6-101 - C6-106 | |
| DOI | https://doi.org/10.1051/jp4:1991617 | |
Beam Injection Assessment of Defects in Semiconductors
2nd International Workshop
J. Phys. IV France 01 (1991) C6-101-C6-106
DOI: 10.1051/jp4:1991617
II. Physikalisches Institut der Universität zu Köln, Abteilung für Metallphysik, Zülpicherstrasse 77, D-5000 Köln 41, Germany
© EDP Sciences 1991
2nd International Workshop
J. Phys. IV France 01 (1991) C6-101-C6-106
DOI: 10.1051/jp4:1991617
DIRECT MEASUREMENT OF THE LOCAL DIFFUSION LENGTH GRAIN BOUNDARIES BY EBIC WITHOUT A SCHOTTKY CONTACT
J. PALM and H. ALEXANDERII. Physikalisches Institut der Universität zu Köln, Abteilung für Metallphysik, Zülpicherstrasse 77, D-5000 Köln 41, Germany
Abstract
The EBIC signal of a grain boundary using only Ohmic contacts on the neighbouring grains is discussed in the light of electronic properties of the grain boundary and as a diffusion problem. The solution of the diffusion equation for two perpendicular planes with different recombination velocities is presented. The evaluation of the diffusion length and the recombination velocities of both the surface and the grain boundary is studied. A few examples of measurements on polycristalline cast silicon (SILSO) show that these parameters vary significantly along a single grain boundary.
© EDP Sciences 1991